Akihiko Ishibashi

TL;DR: In this article, an air-bridged lateral epitaxial overgrowth technique was used to reduce the wing tilt and threading dislocation density in GaN thin films, and the density of dislocations in the wing region was reduced to be <107 cm−2, which was at least two orders of magnitude lower than that of underlying GaN.

TL;DR: In this article, a Group III element and the nitrogen react with each other in an alkali metal melt to cause generation and growth of Group III nitride crystals, and then surfaces of the seed crystals are brought into contact with the alkaline metal melt.

TL;DR: The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first oxide semiconductor layer of AluGavInwN, wherein 0≦u, v, w≦1 and u+v+w=1; forming, in an upper portion of the first nitride layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first polysilicon semic

TL;DR: In this paper, a light-emitting device made of a nitride semiconductor is described, where the semiconductor layer is formed as contacting an upper surface of the substrate, and a cladding layer made of an impurity of a first conductivity type is formed on the active layer.

TL;DR: The semiconductor laser of as discussed by the authors includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in the c plane of the active layers.