M
Masakatsu Suzuki
Researcher at Panasonic
Publications - 51
Citations - 1793
Masakatsu Suzuki is an academic researcher from Panasonic. The author has contributed to research in topics: Layer (electronics) & Semiconductor. The author has an hindex of 21, co-authored 51 publications receiving 1754 citations.
Papers
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Journal ArticleDOI
First-principles calculations of effective-mass parameters of AlN and GaN
TL;DR: In this article, the electronic properties of the wurtzite-type AlN and GaN were analyzed on the basis of the effective-mass Hamiltonian, where the hexagonal symmetry was considered.
Patent
FET having a Si/SiGeC heterojunction channel
TL;DR: In this paper, a channel in which positive holes travel, is formed with the use of a discontinuous portion of a valence band at the interface between the SiGe and Si layers.
Patent
Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same
Isao Kidoguchi,Akihiko Ishibashi,Ryoko Miyanaga,Gaku Sugahara,Masakatsu Suzuki,Masahiro Kume,Yuzaburo Ban,Kiyoyuki Morita,Ayumu Tsujimura,Yoshiaki Hasegawa +9 more
TL;DR: The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first oxide semiconductor layer of AluGavInwN, wherein 0≦u, v, w≦1 and u+v+w=1; forming, in an upper portion of the first nitride layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first polysilicon semic
Patent
Semiconductor light emitting element and method for fabricating the same
Satoshi Kamiyama,Masakatsu Suzuki,Takeshi Uenoyama,Kiyoshi Ohnaka,Akira Takamori,Masaya Mannoh,Isao Kidoguchi,Hideto Adachi,Akihiko Ishibashi,Toshiya Fukuhisa,Yasuhito Kumabuchi +10 more
TL;DR: The semiconductor laser of as discussed by the authors includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in the c plane of the active layers.
Journal ArticleDOI
Strain effect on electronic and optical properties of GaN/AlGaN quantum-well lasers
TL;DR: In this paper, the uniaxial strain effect on the GaN-based laser was investigated on the basis of k⋅p theory and it was found that neither compressive nor tensile biaxia strains in the c plane are so effective on the reduction of the threshold carrier density as conventional zinc-blende lasers.