scispace - formally typeset
A

Akira Kohyama

Researcher at Kyoto University

Publications -  10
Citations -  304

Akira Kohyama is an academic researcher from Kyoto University. The author has contributed to research in topics: Irradiation & Ultimate tensile strength. The author has an hindex of 8, co-authored 10 publications receiving 284 citations.

Papers
More filters
Journal ArticleDOI

Microstructural development in cubic silicon carbide during irradiation at elevated temperatures

TL;DR: In this article, the development of chemically vapor-deposited (CVD) high-purity beta-SiC during neutron and self-ion irradiation at elevated temperatures was studied.
Journal ArticleDOI

Irradiation creep of high purity CVD silicon carbide as estimated by the bend stress relaxation method

TL;DR: The bend stress relaxation technique was applied for an irradiation creep study of high purity, chemically vapor-deposited beta-phase silicon carbide (CVD SiC) ceramic as mentioned in this paper.
Journal ArticleDOI

Synergistic Effects of Heavy Ion and Helium Irradiation on Microstructural and Dimensional Change in β-SiC

TL;DR: In this article, the influence of helium on microstructural development and dimensional stability in high purity SiC after Si 2þ -ion irradiation with and without He þ -ion injection at high temperature were studied.
Journal ArticleDOI

Tensile, Flexural, and Shear Properties of Neutron Irradiated SiC/SiC Composites with Different Fiber-Matrix Interfaces

TL;DR: In this article, the role of inter-layer pyrolytic carbon (PyC), multi-layer SiC/SiC interphase composites and pseudo porous SiC interfaces was evaluated to compare tensile, inter-laminar shear and flexural properties.
Journal ArticleDOI

High-temperature mechanical property improvements of SiC ceramics by NITE process

TL;DR: In this paper, a 3-point bending test was carried out to evaluate in-service fracture behavior, where excellent improvements in bending strength, elastic modulus and fracture behavior were confirmed, compared with the conventional LPS-SiC.