S
Sosuke Kondo
Researcher at Tohoku University
Publications - 95
Citations - 2702
Sosuke Kondo is an academic researcher from Tohoku University. The author has contributed to research in topics: Irradiation & Silicon carbide. The author has an hindex of 22, co-authored 83 publications receiving 2267 citations. Previous affiliations of Sosuke Kondo include Oak Ridge National Laboratory & Kyoto University.
Papers
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Handbook of SiC properties for fuel performance modeling
TL;DR: In this paper, a compilation of non-irradiated and irradiated properties of SiC are provided and reviewed and analyzed in terms of application to TRISO fuels, specifically in the high-temperature irradiation regime.
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Microstructural development in cubic silicon carbide during irradiation at elevated temperatures
TL;DR: In this article, the development of chemically vapor-deposited (CVD) high-purity beta-SiC during neutron and self-ion irradiation at elevated temperatures was studied.
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Thermophysical and mechanical properties of near-stoichiometric fiber CVI SiC/SiC composites after neutron irradiation at elevated temperatures
TL;DR: In this paper, the tensile properties of high purity chemically vapordeposited (CVD) SiC and chemically vapor-infiltrated SiC matrix, pyrocarbon/SiC multilayered interphase composites with Hi-Nicalon™ Type-S and Tyranno™-SA3 SiC fibers were evaluated following neutron irradiation.
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Recent progress in the development of SiC composites for nuclear fusion applications
Takaaki Koyanagi,Yutai Katoh,Takashi Nozawa,Lance Lewis Snead,Sosuke Kondo,Charles H. Henager,Monica Ferraris,Tatsuya Hinoki,Qing Huang +8 more
TL;DR: In this article, an international overview of recent achievements in SiC-based composites for fusion applications is presented, including applications in fusion reactors, high-dose radiation effects, transmutation effects, material lifetime assessment, and development of joining technology (processing, test method development, irradiation resistance, and modeling capability).
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Microstructural defects in SiC neutron irradiated at very high temperatures
TL;DR: In this article, high purity β-SiC irradiated with fast neutrons (up to ∼9.6×10 25 ǫn/m 2, in HFIR) at very high temperatures (1130, 1300, and 1460,°C) were studied by transmission electron microscopy.