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Albert M. Chang
Researcher at National Tsing Hua University
Publications - 124
Citations - 5400
Albert M. Chang is an academic researcher from National Tsing Hua University. The author has contributed to research in topics: Quantum Hall effect & Quantum spin Hall effect. The author has an hindex of 36, co-authored 124 publications receiving 4987 citations. Previous affiliations of Albert M. Chang include New York University & University of Illinois at Urbana–Champaign.
Papers
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Journal ArticleDOI
Scanning Hall probe microscopy
Albert M. Chang,Hans Hallen,L. Harriott,H. F. Hess,H. L. Kao,J. Kwo,R. E. Miller,R. Wolfe,J. P. van der Ziel,T. Y. Chang +9 more
TL;DR: In this paper, the authors describe the implementation of a scanning Hall probe microscope of outstanding magnetic field sensitivity (∼0.1 G) and unprecedented spatial resolution (0.35 μm) to detect surface magnetic fields at close proximity to a sample.
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Chiral Luttinger liquids at the fractional quantum Hall edge
TL;DR: In this paper, a review of electron transport into these edge states is presented, covering both the theory based on the chiral Luttinger liquid and the experimental findings using electron tunneling as the probe.
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Energy structure and quantized Hall effect of two-dimensional holes
TL;DR: Combined magnetotransport and cyclotron-resonance experiments in a two-dimensional hole system at a modulation-doped GaAs-(AlGa)As heterojunction show that the Kramers degeneracy of the lowest subband is lifted for finite $k$ giving rise to two cycloton masses (m}_{1}}^{*} = 0.38{m}
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The Kondo effect in an artificial quantum dot molecule.
TL;DR: The transport properties of a series-coupled double quantum dot as electrons are added one by one onto the dots are reported as a splitting of the Kondo resonance peak in the differential conductance.
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Observation of Chiral Luttinger Behavior in Electron Tunneling into Fractional Quantum Hall Edges.
TL;DR: In this article, the authors measured the tunneling conductance and currentvoltage characteristics for electron tunneling from a bulk doped-GaAs normal metal into the abrupt edge of a fractional quantum Hall effect.