Rafael Cignani

TL;DR: In this article, a double-pulse technique for the dynamic characterization of GaN FETs is presented, which is shown to be not only isothermal but also corresponding to a fixed charge trapping state.

TL;DR: A novel approach to distributed parasitic modeling is adopted for the very first time in association with a nonlinear electron device model, showing how an equivalent intrinsic device and a suitably defined distributed parasitic network can be accurately defined and modeled on the basis of standard measurements and easy electromagnetic simulations.

TL;DR: In this article, a state-space empirical nonlinear model for GaN-based field effect transistors (FETs) is defined, along with the associated identification procedures based on a recently published double pulse measurement technique.

TL;DR: In this article, a thermal measurement setup for the characterization of the thermal behavior of AlGaN/GaN HEMTs suitable for microwave high power amplifier (HPA) design is presented.

TL;DR: In this paper, two C-band monolithic high power amplifiers (HPAs) have been designed and implemented exploiting a 0.25-μm AlGaN/GaN HEMT process on an SiC substrate.