A
Aleksandra Krajewska
Researcher at Military University of Technology in Warsaw
Publications - 66
Citations - 1834
Aleksandra Krajewska is an academic researcher from Military University of Technology in Warsaw. The author has contributed to research in topics: Graphene & Fiber laser. The author has an hindex of 21, co-authored 53 publications receiving 1448 citations. Previous affiliations of Aleksandra Krajewska include Polish Academy of Sciences.
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Journal ArticleDOI
Localized optical-quality doping of graphene on silicon waveguides through a TFSA-containing polymer matrix
Lara Renée Misseeuw,Tymoteusz Ciuk,Aleksandra Krajewska,Iwona Pasternak,Wlodek Strupinski,Benjamin Feigel,Mulham Khoder,Isabelle Vandriessche,Jurgen Van Erps,Sandra Van Vlierberghe,Sandra Van Vlierberghe,Hugo Thienpont,Peter Dubruel,Nathalie Vermeulen +13 more
TL;DR: In this paper, the use of a versatile p-doping strategy based on the incorporation of bis(trifluoromethanesulfonyl)amide (TFSA) into a poly(2,2,3,4,5,5-octafluoropentyl methacrylate) (POFPMA) polymer matrix is presented.
Journal ArticleDOI
Hybrid silica-gold core-shell nanoparticles for fluorescence enhancement
Justyna Grzelak,Aleksandra Krajewska,Bartosz Krajnik,D. Jamioła,Jerzy Choma,Bartłomiej J. Jankiewicz,Dawid Piątkowski,Piotr Nyga,Sebastian Mackowski +8 more
TL;DR: In this article, the authors demonstrate that SiO2 nanoparticles coated with a gold island film (GIF) provide an efficient plasmonic platform for enhancing fluorescence intensity of chlorophyll-containing photosynthetic complexes.
Proceedings ArticleDOI
Infrared Thermal Emission from Joule-Heated Graphene with Defects
TL;DR: In this paper, the influence of mechanical defects on the thermal properties of Joule heated graphene samples is investigated, and experimental results reveal the hot spots attributed to non-uniform heating due to the mechanical defects of graphene.
Journal ArticleDOI
Highly effective gating of graphene on GaN
Jakub Kierdaszuk,Ewelina Rozbiegała,Karolina Piętak,Sebastian Złotnik,Aleksandra Przewłoka,Aleksandra Krajewska,Wawrzyniec Kaszub,Maria Kaminska,Andrzej Wysmołek,J. Binder,Aneta Drabińska +10 more
TL;DR: In this article, the authors used four-layered graphene/gallium nitride (GaN) Schottky diodes with an undoped GaN spacer to demonstrate highly effective gating of graphene at low bias rendering this type of structure very promising for potential applications.
Journal ArticleDOI
Study of Morphology of Graphene using Atomic Force Microscopy and Raman Spectroscopy
TL;DR: Pustelny et al. as mentioned in this paper presented the analysis of the effect of gaseous media on the resistance sensing structure of a few-layer Graphene sensor layer and the results of the experiments using atomic force microscopy, electron microscopy and Raman spectroscopy.