Showing papers by "Alex Q. Huang published in 1998"
12 Oct 1998
TL;DR: The emitter-turn-off thyristor (ETO) as mentioned in this paper is a hybrid MOS-bipolar high power semiconductor device with the advantages of GTO's high current/voltage capability and MOS gate control.
Abstract: The emitter-turn-off thyristor (ETO) is a hybrid MOS-bipolar high power semiconductor device with the advantages of GTO's high current/voltage capability and MOS gate control Its superior control characteristics combined with its high speed, wider RBSOA, higher controllable maximum current, forward current saturation capability, its on-device current sensing and low cost make the ETO the most promising power device in high power, smart control applications Numerical analysis and experimental demonstration of the ETO are presented in this paper
75 citations
Patent•
30 Sep 1998TL;DR: In this article, a family of emitter controlled thyristors employing plurality of control schemes for turning the thyristor an and off was described, all of which consisted of a pair of MOS transistors, one connected in series with the gate and the other providing a negative feedback to the gate.
Abstract: A family of emitter controlled thyristors employ plurality of control schemes for turning the thyristor an and off. In a first embodiment of the present invention a family of thyristors are disclosed all of which comprise a pair of MOS transistors, the first of which is connected in series with the thyristor and a second which provides a negative feedback to the thyristor gate. A negative voltage applied to the gate of the first MOS transistor causes the thyristor to turn on to conduct high currents. A zero to positive voltage applied to the first MOS gate causes the thyristor to turn off. The negative feedback insures that the thyristor only operates at its breakover boundaries of the latching condition with the NPN transistor portion of the thyristor operating in the active region. Under this condition, the anode voltage V A continues to increase without significant anode current increase. Emitter turn-off (ETO) thyristor fabrication packages are also disclosed having packaged semiconductor devices controlling the thyristor.
32 citations
03 Jun 1998
TL;DR: In this paper, a fully depleted LDD MOSFET built on silicon-on-oxide is proposed as a candidate device for future voltage regulator modules (VRM), which are dedicated DC/DC converters to power advanced microprocessors, and which are expected to work at multi-megahertz frequencies.
Abstract: In this paper, a fully depleted LDD MOSFET built on silicon-on-oxide is proposed as a candidate device for future voltage regulator modules (VRM), which are dedicated DC/DC converters to power advanced microprocessors, and which are expected to work at multi-megahertz frequencies.
16 citations
TL;DR: In this article, a unified view of MOS-gated thyristors based on the equivalent circuits of MCI is presented, which facilitates a qualitative understanding of all existing MGTs and also provides a methodology for new MGT's development.
Abstract: MOS-gated thyristors (MGTs) are a family of important power semiconductor devices which are gaining more and more attention due to their superior forward current carrying capability and ease of control provided by insulating gates. This paper presents for the first time a unified view of MGTs based on the equivalent circuits of MOS controlled injection (MCI). This unified view facilitates a qualitative understanding of all existing MGTs and also provides a methodology for new MGT's development.
8 citations
TL;DR: In this article, a comprehensive investigation of the electrical destructive failure mechanism of MOS-controlled thyristors (MCT) during inductive turn-off was performed, and the relationship between the RBSOA of MCT and the I-V characteristics of the lower open-base transistor was identified.
Abstract: A comprehensive investigation of the electrical destructive failure mechanism of MOS-controlled thyristors (MCT) during inductive turn-off was performed in this study. For the first time, the relationship between the RBSOA of MCT and the I – V characteristics of the lower open-base transistor was identified. The dynamic avalanche limitation of the MCT was analyzed both qualitatively and quantitatively based on a first-order analytical model developed to characterize the lower open-base transistor of the MCT. It was discovered that the dynamic current gain characteristics of the transistor account for the performance discrepancy between the P - and N -type MCT at high voltages. The impact of the doping profile on the dynamic current gain characteristics has also been investigated. Finally, a unified view of the theoretical limitation of the RBSOA of the MCT is presented.
8 citations
12 Oct 1998
TL;DR: The emitter turn-off thyristor (ETO) as discussed by the authors is a novel hybrid MOS-bipolar high power semiconductor device with the advantages of gate turnoff Thyristor's (GTO) high voltage and high current capabilities.
Abstract: The emitter turn-off thyristor (ETO) is a novel hybrid MOS-bipolar high power semiconductor device with the advantages of gate turn-off thyristor's (GTO) high voltage and high current capabilities, and the ease of control of a MOS gate. The introduction of the emitter turn-off technology in the ETO also results in a significantly improved speed and reverse biased safe operating area (RBSOA). Other promising features of the ETO include the high-voltage current saturation capability and on-device current sensing capability. These technological advancements are achieved through the change of fundamental device physics that govern the operation of high power GTO devices through a low cost and efficient packaging technology. Numerical analysis and experimental demonstration of the ETO's unity turn-off gain capability are presented in this paper.
6 citations
12 Oct 1998
TL;DR: In this paper, a dual-channel emitted switched thyristor (DC-EST) structure with low conduction loss and improved forward biased safe operating area (FBSOA) is proposed for the first time.
Abstract: A new dual-channel emitted switched thyristor (DC-EST) structure with low conduction loss and improved forward biased safe operating area (FBSOA) is proposed for the first time. It uses a P-channel MOSFET with current dependent channel resistance to improve the trade-off relationship between the FBSOA and the forward voltage drop. Its operation is analyzed and demonstrated by 2-D simulations.
2 citations
12 Oct 1998
TL;DR: In this paper, a bipolar junction diode (BJD) was proposed to control the injection efficiency of the p+/n- junction of a p-i-n diode by varying the gain of a bipolar transistor which is merged with the junction and operated in a reverse active fashion.
Abstract: In this paper, a new power diode structure, called the bipolar junction diode (BJD) is proposed. It has superior dynamic characteristics over the conventional p-i-n diode. For the first time, it demonstrates the possibility to control the injection efficiency of the p+/n- junction of a p-i-n diode by varying the gain of a bipolar transistor which is merged with the junction and operated in a reverse active fashion. Both numerical simulations and experimental results are provided to illustrate this novel concept.