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Alexander A. Lebedev

Researcher at Ioffe Institute

Publications -  72
Citations -  419

Alexander A. Lebedev is an academic researcher from Ioffe Institute. The author has contributed to research in topics: Graphene & Silicon carbide. The author has an hindex of 9, co-authored 72 publications receiving 293 citations. Previous affiliations of Alexander A. Lebedev include Baltic State Technical University & Russian Academy of Sciences.

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MBE Growth and Structural Properties of GaP and InP Nanowires on a SiC Substrate with a Graphene Layer

TL;DR: In this paper, the MBE growth of GaP and InP nanowires on a SiC substrate with a graphene layer is demonstrated for the first time, and the results of structural measurements demonstrate that the nanowsires are formed in the wurtzite phase, which is not typical of bulk III-V materials.
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Transition between Electron Localization and Antilocalization and Manifestation of the Berry Phase in Graphene on a SiC Surface

TL;DR: In this article, it was shown that the transport properties of graphitized silicon carbide are controlled by a surface graphene layer heavily doped with electrons, and a crossover in the magnetoresistance from weak localization to weak antilocalization was observed for the first time in samples of this kind at elevated temperatures.
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Development of the Processing Technique and Study of Microwave Switches Based on 4H-SiC p–i–n Diodes

TL;DR: In this paper, the processing technique for microwave p-i-n diodes based on SiC (silicon carbide) has been developed and switches in the 3-cm range have been fabricated.
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Field Effect in Monolayer Graphene Associated with the Formation of Graphene–Water Interface

TL;DR: In this paper, the electrical properties of monolayer graphene, prepared by thermal decomposition of silicon carbide in argon, in the field effect transistor and the four-probe geometries are investigated.