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Alexander A. Lebedev
Researcher at Ioffe Institute
Publications - 72
Citations - 419
Alexander A. Lebedev is an academic researcher from Ioffe Institute. The author has contributed to research in topics: Graphene & Silicon carbide. The author has an hindex of 9, co-authored 72 publications receiving 293 citations. Previous affiliations of Alexander A. Lebedev include Baltic State Technical University & Russian Academy of Sciences.
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Journal ArticleDOI
Intercalation of Iron Atoms under Graphene Formed on Silicon Carbide
M. V. Gomoyunova,G. S. Grebenyuk,V. Yu. Davydov,I. A. Ermakov,I. A. Eliseyev,Alexander A. Lebedev,S. P. Lebedev,E. Yu. Lobanova,Alexander N. Smirnov,Dmitry A. Smirnov,Dmitry A. Smirnov,I. I. Pronin +11 more
TL;DR: In this article, the intercalation of iron under a graphene monolayer grown on 4H-SiC(0001) was studied, and it was found that intercalated iron atoms are localized not only between graphene and a buffer layer coating SiC, but also under the buffer layer itself.
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Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC
I. A. Eliseyev,V. Yu. Davydov,Alexander N. Smirnov,Mikhail Nestoklon,P. A. Dementev,S. P. Lebedev,Alexander A. Lebedev,A. V. Zubov,S. Mathew,S. Mathew,Joerg Pezoldt,Kirill A. Bokai,D. Yu. Usachov +12 more
TL;DR: In this paper, the effect of the electron concentration on the Raman spectra of single-layer graphene films has been carried out and it was shown that for the correct estimation of electron concentration and strain values, it is necessary to take into account the value of the Fermi velocity in the graphene layer.
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Radiation Hardness of Silicon Carbide upon High-Temperature Electron and Proton Irradiation.
TL;DR: In this paper, the radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed, and it is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels.
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Impact of 0.9 MeV electron irradiation on main properties of high voltage vertical power 4H-SiC MOSFETs
Alexander A. Lebedev,Vitali V. Kozlovski,M E Levinshtein,A.E. Ivanov,A. M. Strel’chuk,A. V. Zubov,Leonid Fursin +6 more
TL;DR: In this article, the impact of irradiation with 0.9 MeV electrons on the main properties of 4H-SiC MOSFETs of 1.2kV class at irradiation doses Φ within the range from 0.125 to 3 MGy (fluence F from 75 × 1014 to 1 2 cm−2).
Journal ArticleDOI
Graphene on SiC Substrate as Biosensor: Theoretical Background, Preparation, and Characterization
Alexander A. Lebedev,Sergey Yu Davydov,I. A. Eliseyev,Alexander Roenkov,Oleg Avdeev,S. P. Lebedev,Yurii Makarov,Mikhail Puzyk,Sergey Klotchenko,Alexander Usikov +9 more
TL;DR: In this paper, the performance of a single-layer graphene-based sensor for detection of protein molecules was evaluated with an immunochemical system constituted by fluorescein and monoclonal antibodies (mAbs) binding this dye.