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Alexander A. Lebedev
Researcher at Ioffe Institute
Publications - 72
Citations - 419
Alexander A. Lebedev is an academic researcher from Ioffe Institute. The author has contributed to research in topics: Graphene & Silicon carbide. The author has an hindex of 9, co-authored 72 publications receiving 293 citations. Previous affiliations of Alexander A. Lebedev include Baltic State Technical University & Russian Academy of Sciences.
Papers
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Journal ArticleDOI
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs
Alexander A. Lebedev,M E Levinshtein,P. A. Ivanov,Vitali V. Kozlovski,A. M. Strel’chuk,E. I. Shabunina,Leonid Fursin +6 more
TL;DR: In this article, low frequency noise in 4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) irradiated with 15-MeV protons was studied.
Journal ArticleDOI
Porous SiC Substrate Materials for High-Quality Epitaxial and Bulk Growth
Marina G. Mynbaeva,N. Savkina,Andrey Zubrilov,N. Seredova,M. Scheglov,A. Titkov,A. Tregubova,Alexander A. Lebedev,A. Kryzhanovski,I. Kotousova,V. A. Dmitriev +10 more
TL;DR: In this article, a nano-scale epitaxial lateral overgrowth (NELOG) method was proposed for defect reduction in SiC, which is based on porous substrate materials.
Journal ArticleDOI
Effect of high temperature irradiation with 15 MeV protons on characteristics of power SiC Schottky diodes
Alexander A. Lebedev,Vitali V. Kozlovski,M.E. Levinshtein,Anton E. Ivanov,Klava S. Davydovskaya +4 more
TL;DR: In this paper, the effect of high-temperature irradiation with 15-MeV protons on the parameters of highvoltage 4H-SiC Schottky diodes has been studied at irradiation temperatures of 23 −500 −C and doses in the range from 7 −×-1013 to 2 −×−1014 cm−2.
Journal ArticleDOI
Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs
Alexander A. Lebedev,Vitali V. Kozlovski,M E Levinshtein,P. A. Ivanov,A. M. Strel’chuk,A. V. Zubov,Leonid Fursin +6 more
TL;DR: In this article, the effect of irradiation with 15 MeV protons on the electrical properties of high-power vertical 4H-SiC MOSFETs of 1.2 kV class has been studied experimentally with doses in the range 0 ≤ Φ ≤ 1014 cm−2.
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4H-SiC p–i–n diodes grown by sublimation epitaxy in vacuum (SEV) and their application as microwave diodes
N Camara,N Camara,Konstantinos Zekentes,V V Zelenin,P L Abramov,A.V. Kirillov,L.P. Romanov,N. S. Boltovets,Valentyn A. Krivutsa,A Thuaire,Edwige Bano,E Tsoi,Alexander A. Lebedev +12 more
TL;DR: Sublimation epitaxy under vacuum (SEV) was investigated as a method for growing 4H-SiC epitaxial structures for p-i-n diode fabrication as discussed by the authors.