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Alexander Omelchenko
Researcher at National Research University – Higher School of Economics
Publications - 68
Citations - 572
Alexander Omelchenko is an academic researcher from National Research University – Higher School of Economics. The author has contributed to research in topics: Laser & Lasing threshold. The author has an hindex of 12, co-authored 66 publications receiving 519 citations. Previous affiliations of Alexander Omelchenko include Saint Petersburg State Polytechnic University & Saint Petersburg Academic University.
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Measurement of radiometric surface temperature and integrated backscattered light intensity during feedback-controlled laser-assisted cartilage reshaping
Brian J. F. Wong,Thomas E. Milner,Bahman Anvari,Bahman Anvari,Alexander P. Sviridov,Alexander Omelchenko,V. V. Bagratashvili,Emil N. Sobol,J.S. Nelson +8 more
TL;DR: In this article, porcine auricular cartilage was irradiated with a Nd:YAG laser (λ=1.32 μm) at two power levels (W/cm2).
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A Topological Study of Textile Structures. Part I: An Introduction to Topological Methods
TL;DR: It is shown that textile structures can be considered as a specific case of knots or links and can be represented by diagrams on a torus, which enables modern methods of knot theory to be applied to the study of the topology of textiles.
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A prospective randomised study of laser reshaping of cartilage in vivo.
TL;DR: Histological examination revealed that there was a dramatic eccentric proliferation of perichondrium away from the centre of irradiation with a noticeable absence of any inflammation in all laser-irradiated areas.
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Strain effects on indium incorporation and optical transitions in green-light InGaN heterostructures of different orientations
TL;DR: In this paper, the strain effect on indium incorporation and optical transitions in bulk InGaN and GaN/InGaN/GaN quantum wells coherently grown on GaN substrates with different orientations of hexagonal axis is studied by simulation.
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Indium incorporation and optical transitions in InGaN bulk materials and quantum wells with arbitrary polarity
TL;DR: In this article, the effect of strain originated from the lattice mismatch on optical transitions in the bulk InGaN and quantum wells is examined with account of both complex valence band structure and polarization charges induced at the In-GaN/GaN interfaces.