Preface to Third Edition. 1 Resistivity. 1.1 Introduction. 1.2 Two-Point Versus Four-Point Probe. 1.3 Wafer Mapping. 1.4 Resistivity Profiling. 1.5 Contactless Methods. 1.6 Conductivity Type. 1.7 Strengths and Weaknesses. Appendix 1.1 Resistivity as a Function of Doping Density. Appendix 1.2 Intrinsic Carrier Density. References. Problems. Review Questions. 2 Carrier and Doping Density. 2.1 Introduction. 2.2 Capacitance-Voltage (C-V). 2.3 Current-Voltage (I-V). 2.4 Measurement Errors and Precautions. 2.5 Hall Effect. 2.6 Optical Techniques. 2.7 Secondary Ion Mass Spectrometry (SIMS). 2.8 Rutherford Backscattering (RBS). 2.9 Lateral Profiling. 2.10 Strengths and Weaknesses. Appendix 2.1 Parallel or Series Connection? Appendix 2.2 Circuit Conversion. References. Problems. Review Questions. 3 Contact Resistance and Schottky Barriers. 3.1 Introduction. 3.2 Metal-Semiconductor Contacts. 3.3 Contact Resistance. 3.4 Measurement Techniques. 3.5 Schottky Barrier Height. 3.6 Comparison of Methods. 3.7 Strengths and Weaknesses. Appendix 3.1 Effect of Parasitic Resistance. Appendix 3.2 Alloys for Contacts to Semiconductors. References. Problems. Review Questions. 4 Series Resistance, Channel Length and Width, and Threshold Voltage. 4.1 Introduction. 4.2 PN Junction Diodes. 4.3 Schottky Barrier Diodes. 4.4 Solar Cells. 4.5 Bipolar Junction Transistors. 4.6 MOSFETS. 4.7 MESFETS and MODFETS. 4.8 Threshold Voltage. 4.9 Pseudo MOSFET. 4.10 Strengths and Weaknesses. Appendix 4.1 Schottky Diode Current-Voltage Equation. References. Problems. Review Questions. 5 Defects. 5.1 Introduction. 5.2 Generation-Recombination Statistics. 5.3 Capacitance Measurements. 5.4 Current Measurements. 5.5 Charge Measurements. 5.6 Deep-Level Transient Spectroscopy (DLTS). 5.7 Thermally Stimulated Capacitance and Current. 5.8 Positron Annihilation Spectroscopy (PAS). 5.9 Strengths and Weaknesses. Appendix 5.1 Activation Energy and Capture Cross-Section. Appendix 5.2 Time Constant Extraction. Appendix 5.3 Si and GaAs Data. References. Problems. Review Questions. 6 Oxide and Interface Trapped Charges, Oxide Thickness. 6.1 Introduction. 6.2 Fixed, Oxide Trapped, and Mobile Oxide Charge. 6.3 Interface Trapped Charge. 6.4 Oxide Thickness. 6.5 Strengths and Weaknesses. Appendix 6.1 Capacitance Measurement Techniques. Appendix 6.2 Effect of Chuck Capacitance and Leakage Current. References. Problems. Review Questions. 7 Carrier Lifetimes. 7.1 Introduction. 7.2 Recombination Lifetime/Surface Recombination Velocity. 7.3 Generation Lifetime/Surface Generation Velocity. 7.4 Recombination Lifetime-Optical Measurements. 7.5 Recombination Lifetime-Electrical Measurements. 7.6 Generation Lifetime-Electrical Measurements. 7.7 Strengths and Weaknesses. Appendix 7.1 Optical Excitation. Appendix 7.2 Electrical Excitation. References. Problems. Review Questions. 8 Mobility. 8.1 Introduction. 8.2 Conductivity Mobility. 8.3 Hall Effect and Mobility. 8.4 Magnetoresistance Mobility. 8.5 Time-of-Flight Drift Mobility. 8.6 MOSFET Mobility. 8.7 Contactless Mobility. 8.8 Strengths and Weaknesses. Appendix 8.1 Semiconductor Bulk Mobilities. Appendix 8.2 Semiconductor Surface Mobilities. Appendix 8.3 Effect of Channel Frequency Response. Appendix 8.4 Effect of Interface Trapped Charge. References. Problems. Review Questions. 9 Charge-based and Probe Characterization. 9.1 Introduction. 9.2 Background. 9.3 Surface Charging. 9.4 The Kelvin Probe. 9.5 Applications. 9.6 Scanning Probe Microscopy (SPM). 9.7 Strengths and Weaknesses. References. Problems. Review Questions. 10 Optical Characterization. 10.1 Introduction. 10.2 Optical Microscopy. 10.3 Ellipsometry. 10.4 Transmission. 10.5 Reflection. 10.6 Light Scattering. 10.7 Modulation Spectroscopy. 10.8 Line Width. 10.9 Photoluminescence (PL). 10.10 Raman Spectroscopy. 10.11 Strengths and Weaknesses. Appendix 10.1 Transmission Equations. Appendix 10.2 Absorption Coefficients and Refractive Indices for Selected Semiconductors. References. Problems. Review Questions. 11 Chemical and Physical Characterization. 11.1 Introduction. 11.2 Electron Beam Techniques. 11.3 Ion Beam Techniques. 11.4 X-Ray and Gamma-Ray Techniques. 11.5 Strengths and Weaknesses. Appendix 11.1 Selected Features of Some Analytical Techniques. References. Problems. Review Questions. 12 Reliability and Failure Analysis. 12.1 Introduction. 12.2 Failure Times and Acceleration Factors. 12.3 Distribution Functions. 12.4 Reliability Concerns. 12.5 Failure Analysis Characterization Techniques. 12.6 Strengths and Weaknesses. Appendix 12.1 Gate Currents. References. Problems. Review Questions. Appendix 1 List of Symbols. Appendix 2 Abbreviations and Acronyms. Index.

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Semiconductor Material and Device Characterization

Modern nanotechnology allows one to scale down various important devices (sensors, chips, fibers, etc.) and thus opens up new horizons for their applications. The efficiency of most of them is based on fundamental physical phenomena, such as transport of wave excitations and resonances. Short propagation distances make phase-coherent processes of waves important. Often the scattering of waves involves propagation along different paths and, as a consequence, results in interference phenomena, where constructive interference corresponds to resonant enhancement and destructive interference to resonant suppression of the transmission. Recently, a variety of experimental and theoretical work has revealed such patterns in different physical settings. The purpose of this review is to relate resonant scattering to Fano resonances, known from atomic physics. One of the main features of the Fano resonance is its asymmetric line profile. The asymmetry originates from a close coexistence of resonant transmission and resonant reflection and can be reduced to the interaction of a discrete (localized) state with a continuum of propagation modes. The basic concepts of Fano resonances are introduced, their geometrical and/or dynamical origin are explained, and theoretical and experimental studies of light propagation in photonic devices, charge transport through quantum dots, plasmon scattering in Josephson-junction networks, and matter-wave scattering in ultracold atom systems, among others are reviewed.

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Fano resonances in nanoscale structures

Solar Engineering Of Thermal Processes

In this thesis, the existence and uniqueness of gradient trajectories near an A2singularity are analysed. The A2-singularity is called a birth-death critical point in the real case. The birth-death critical point appears in a one-parameter family of functions. Such a family of functions has precisely two Morse critical points of index difference one, on the birth side. The result of the real case states that these two critical points are joined by a unique gradient trajectory up to time-shift. Here the gradient flow is defined with respect to any family of Riemannian metrics. This can be viewed as a converse to Smale’s cancellation theorem. We also look at the complex analogue of the result in Picard–Lefschetz theory. This analogue considers a holomorphic one-parameter family with an A2-singularity. Such a family has two critical Morse critical points near the singularity for every small non-zero parameter. We prove that the two Lagrangian vanishing cycles associated to these critical points intersect transversally in exactly one point in all regular fibres along a straight line. The result is obtained by analysing the gradient trajectories of the real part of these functions. Both proofs start with a normal form in local coordinates for such families of functions. The gradient equations in these coordinates can be rescaled into a fast-slow system of non-linear differential equation. Existence will rely on an adiabatic limit analysis whereas uniqueness follows from a Conley index pair construction. The latter construction will also show that connecting gradient trajectories cannot leave the local charts. Even though the proof of these two results follow from similar lines of argument, the real case cannot be reduced to the complex case and vice versa.

Doctoral Thesis by

A review on simulation-based optimization methods applied to building performance analysis

A dimensionless solution is presented for the surface recombination component τs of the effective lifetime τeff of the fundamental mode of excess carrier decay in semiconductors. The case of different surface recombination velocities S1 and S2 is analyzed. As the problem is solved in terms of dimensionless variables, the solution obtained is a general one. A normalized surface lifetime τ *s is plotted as a function of normalized surface recombination velocities S*1 and S*2. This allows rapid calculation and visualization of the influence of surface recombination on τs, for all possible cases of recombination parameters. That is, for any value of S1, S2, W (the width of a sample), and D (the diffusion constant) a solution for the surface lifetime τs can be found from the one graphical solution. It is a useful tool for rapidly interpreting the effect of surface recombination in transient lifetime measurement experiments. For the cases where S=S1=S2, or where S1 or S2 is zero, this approach is an elegant too...

Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors

Electricity load forecasting is an important tool which can be utilized to enable effective control of commercial building electricity loads. Accurate forecasts of commercial building electricity loads can bring significant environmental and economic benefits by reducing electricity use and peak demand and the corresponding GHG emissions. This paper presents a review of different electricity load forecasting models with a particular focus on regression models, discussing different applications, most commonly used regression variables and methods to improve the performance and accuracy of the models. A comparison between the models is then presented for forecasting day ahead hourly electricity loads using real building and Campus data obtained from the Kensington Campus and Tyree Energy Technologies Building (TETB) at the University of New South Wales (UNSW). The results reveal that Artificial Neural Networks with Bayesian Regulation Backpropagation have the best overall root mean squared and mean absolute percentage error performance and almost all the models performed better predicting the overall Campus load than the single building load. The models were also tested on forecasting daily peak electricity demand. For each model, the obtained error for daily peak demand forecasts was higher than the average day ahead hourly forecasts. The regression models which were the main focus of the study performed fairly well in comparison to other more advanced machine learning models.

A review and analysis of regression and machine learning models on commercial building electricity load forecasting

The achievement of high-quality continuous polycrystalline silicon (poly-Si) layers onto glass substrates by using aluminum-induced crystallization is reported. The crystallization behavior of dc sputtered amorphous silicon on glass induced by an Al interface layer has been investigated above and below the eutectic temperature of 577 °C. Secondary electron micrographs in combination with energy-dispersive x-ray microanalysis show that annealing below this temperature leads to the juxtaposed Al and Si layers exchanging places. The newly formed poly-Si layer is fully crystallized and of good crystalline quality, according to Raman spectroscopy and transmission electron microscopy investigations. At 500 °C, the time needed to crystallize a 500-nm-thick Si layer is as short as 30 min. By annealing above the eutectic temperatures, layer exchange is not as pronounced and the newly formed Al layer is found to contain a network of crystallized Si.

Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature

A recent review has suggested that the commonly cited value of 1.45×1010 cm−3 for the silicon intrinsic carrier concentration at 300 K is inconsistent with the best experimental data. An alternate value of 1.08×1010 cm−3 was proposed. From measurements of the current‐voltage characteristics of p‐n junction diodes, this paper reports a new and more accurate determination of this parameter over the 275–375 K temperature range which supports such lower values. The one‐standard‐deviation uncertainty in the measurement of the intrinsic carrier concentration is estimated to lie in the 3%–4% range, about three times smaller than previous measurements at these temperatures. Additionally, this technique provides information on the minority carrier electron diffusivity in silicon.

Alistair B. Sproul

Papers

Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors

A review and analysis of regression and machine learning models on commercial building electricity load forecasting

Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature

Improved value for the silicon intrinsic carrier concentration from 275 to 375 K

Recent advances in the analysis of residential electricity consumption and applications of smart meter data