Allen R. Landin

TL;DR: In this paper, a method and system for detecting material bound on a surface of a piezoelectric resonator is presented, where a multiple-port sensing device is provided which includes thin-film sensing and reference resonators monolithically formed on a substrate.

Abstract: This paper will present an overview of the thin film resonator technology discussing issues of materials, materials processing, device physics, and potential applications in oscillators and bandpass filters including performance characteristics achieved to date. The thin film resonator (TFR) was initially demonstrated in the form of a composite membrane structure on a silicon substrate and later on GaAs. The minimum requirements for an acoustic resonator are reflecting surfaces, a means of exciting the acoustic wave (piezoelectric films), and a set of electrodes (photolithographically defined metal film patterns). With these basic principles in mind, a number of variations of the basic structure have been studied. From a technological standpoint the impact of the TFR technology stems from two main features; first, the thin film approach allows fabrication of fundamental mode resonators to 2GHz and possibly beyond, and second, the resonators can be fabricated on semiconductor substrates and integrated with active devices. The fruition of the TFR into an established technology involves solving complex problems in thin film materials growth, materials processing (including IC process cornpatability), device physics, and systems integration. These issues will be discussed and progress made on these problems will be cited with specific examples.

TL;DR: In this paper, a composite ZnO bulk-acoustic-wave thin-film resonator (TFR) has been fabricated on a silicon substrate with a double-diffused BJT.

TL;DR: An integrated thin film transistor on an insulator circuit made up of a number of thin film transistors formed with small feature size and densely packed so as to allow interconnection as a complex circuit as mentioned in this paper.

TL;DR: In this paper, a method of making patterned metal oxide films on microelectronic wafer substrates is described, where a sol-gel of a metal oxide in combination with an ultraviolet light sensitive photo-active compound is applied to a silicon wafer substrate, and the wafer subjected to a predetermined pattern of ultraviolet light to cause the photoactive compound to respond to the ultraviolet light.