The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.

http://ieeexplore.ieee.org/iel5/6354/16969/00781867.pdf

Photonic crystals

An overview of the state of art in ferroelectric thin films is presented. First, we review applications: microsystems' applications, applications in high frequency electronics, and memories based on ferroelectric materials. The second section deals with materials, structure (domains, in particular), and size effects. Properties of thin films that are important for applications are then addressed: polarization reversal and properties related to the reliability of ferroelectric memories, piezoelectric nonlinearity of ferroelectric films which is relevant to microsystems' applications, and permittivity and loss in ferroelectric films-important in all applications and essential in high frequency devices. In the context of properties we also discuss nanoscale probing of ferroelectrics. Finally, we comment on two important emerging topics: multiferroic materials and ferroelectric one-dimensional nanostructures. (c) 2006 American Institute of Physics.

/pdf/ferroelectric-thin-films-review-of-materials-properties-and-rc7umdkxk5.pdf

Ferroelectric thin films: Review of materials, properties, and applications

Controlling the interaction between localized optical and mechanical excitations has recently become possible following advances in micro- and nanofabrication techniques. So far, most experimental studies of optomechanics have focused on measurement and control of the mechanical subsystem through its interaction with optics, and have led to the experimental demonstration of dynamical back-action cooling and optical rigidity of the mechanical system. Conversely, the optical response of these systems is also modified in the presence of mechanical interactions, leading to effects such as electromagnetically induced transparency (EIT) and parametric normal-mode splitting. In atomic systems, studies of slow and stopped light (applicable to modern optical networks and future quantum networks) have thrust EIT to the forefront of experimental study during the past two decades. Here we demonstrate EIT and tunable optical delays in a nanoscale optomechanical crystal, using the optomechanical nonlinearity to control the velocity of light by way of engineered photon-phonon interactions. Our device is fabricated by simply etching holes into a thin film of silicon. At low temperature (8.7 kelvin), we report an optically tunable delay of 50 nanoseconds with near-unity optical transparency, and superluminal light with a 1.4 microsecond signal advance. These results, while indicating significant progress towards an integrated quantum optomechanical memory, are also relevant to classical signal processing applications. Measurements at room temperature in the analogous regime of electromagnetically induced absorption show the utility of these chip-scale optomechanical systems for optical buffering, amplification, and filtering of microwave-over-optical signals.

/pdf/electromagnetically-induced-transparency-and-slow-light-with-1ue1i7b56y.pdf

Electromagnetically induced transparency and slow light with optomechanics

A dry etching method for etching an aluminum (Al) based layer for effectively combatting the after-corrosion in accordance with three aspects. In the first aspect, while a resist mask and chlorine based gas as known per se are used, S 2 F 2 is used during etching of the barrier metal layer. In this manner, residual chlorine in a carbonaceous polymer as a sidewall protection material or a resist mask is replaced by fluorine, whilst sulfur yielded from S 2 F 2 under conditions of discharge dissociation is deposited to provide for sidewall protection effects. In the second aspect, a SiO 2 mask and an S 2 Cl 2 etching gas are used. Since the sidewall protection material is solely sulfur yielded from S 2 Cl 2 , it becomes possible to avoid the effects of the residual chlorine. In the third aspect, an neutral Ar beam is irradiated at a suitable stage in the etching process for increasing the resistance of the SiO 2 mask against reducing compounds contained in an etching gas for the layer of the aluminum-based material. By irradiation of the neutral beam, a reduction-resistant layer is produced on the surface of the SiO 2 mask to render it possible to reduce the mask thickness without producing problems such as increased step differences on the wafer surface.

Dry etching method

The wet etching of GaN, AlN, and SiC is reviewed including conventional etching in aqueous solutions, electrochemical etching in electrolytes and defect-selective chemical etching in molten salts. The mechanism of each etching process is discussed. Etching parameters leading to highly anisotropic etching, dopant-type/bandgap selective etching, defect-selective etching, as well as isotropic etching are discussed. The etch pit shapes and their origins are discussed. The applications of wet etching techniques to characterize crystal polarity and defect density/distribution are reviewed. Additional applications of wet etching for device fabrication, such as producing crystallographic etch profiles, are also reviewed.

Wet etching of GaN, AlN, and SiC : a review

The authors present recent experimental and modeling results for high-Q microwave acoustic resonators and filters for use in oscillators and other frequency control applications. Overmoded resonators have exhibited an FQ product greater than 1*10/sup 14/ Hz (e.g., Q=68,000 at 1.6 GHz) with a strong inductive response suitable for one-port and two-port oscillator feedback circuits. Ladder filters fabricated with overmoded resonators have loaded Qs greater than 40,000 with 76-kHz bandwidth at 1.6 GHz. Aluminum nitride films were used for transduction on Z-cut sapphire and lithium niobate substrates. >

High-Q microwave acoustic resonators and filters

This paper presents an overview of the thin film resonator technology as it has been developed over the past few years. A brief discussion of the basic elements of wireless systems is described in order to set the stage for a description of the important enabling aspects of what is generally termed the thin film resonator (TFR) technology. Features of TFRs will be described along with specific examples of resonators and filters. The all important packaging problem is described in the context of device performance and manufacturing.

Thin Film Resonators and Filters

This letter reports on a new and unique form of acoustic bulk wave resonator composed of a thin film of ZnO sputtered onto a thin Si membrane supporting structure. The piezoelectric ZnO is used to excite a longitudinal bulk wave which reflects from the free surface of the film and membrane. The structure thus forms an acoustical cavity which exhibits parallel and series electrical resonance responses at the ZnO film electrodes for both even and odd order modes. Fundamental resonant frequencies near 500 MHz have been achieved with parallel resonant Q’s over 9000. The temperature coefficient of resonant frequency was found to be −31 ppm for a Si to ZnO thickness ratio of six.

Acoustic bulk wave composite resonators

Advances in wireless systems have placed increased demands on high performance frequency control devices for operation into the microwave range. With spectrum crowding, high bandwidth requirements, miniaturization, and low cost requirements as a background, the thin film resonator technology has evolved into the mainstream of applications. This technology has been under development for over 40 years in one form or another, but it required significant advances in integrated circuit processing to reach microwave frequencies and practical manufacturing for high-volume applications. This paper will survey the development of the thin film resonator technology and describe the core elements that give rise to resonators and filters for today's high performance wireless applications.

Thin film resonator technology

This paper surveys applications of acoustic waves in microwave devices. After a general and historical introduction to bulk acoustic waves (BAWs), surface acoustic waves (SAWs), practical wave types, and acoustoelectric transducers, a review is given of technologically important materials for microwave acoustic applications. Following this, we discuss BAW and SAW microwave devices and their technologies. Specifically reviewed are thin-film resonators and filters, transversal filters, and filters for correlative analog signal processing. Finally, an overview of the most important microwave applications is given, along with manufacturing and packaging issues.

Kenneth Meade Lakin

Papers

High-Q microwave acoustic resonators and filters

Thin Film Resonators and Filters

Acoustic bulk wave composite resonators

Thin film resonator technology

Microwave acoustic materials, devices, and applications