Publisher Summary This review is concerned with the neglected class of inorganic compounds, which contain ions of the same element in two different formal states of oxidation. Although the number of references cited in our review show that many individual examples of this class have been studied, yet they have very rarely been treated as a class, and there has never before, to our knowledge, been a systematic attempt to classify their properties in terms of their electronic and molecular structures. In the past, systems containing an element in two different states of oxidation have gone by various names, the terms “mixed valence,” nonintegral valence,” “mixed oxidation,” “oscillating valency,” and “controlled valency” being used interchangeably. Actually, none of these is completely accurate or all-embracing, but in our hope to avoid the introduction of yet another definition, we have somewhat arbitrarily adopted the phrase “mixed valence” for the description of these systems. The concept of resonance among various valence bond structures is one of the cornerstones of modern organic chemistry.

Mixed Valence Chemistry-A Survey and Classification

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A dome-shaped superconducting region appears in the phase diagrams of many unconventional superconductors. In doped band insulators, however, reaching optimal superconductivity by the fine-tuning of carriers has seldom been seen. We report the observation of a superconducting dome in the temperature-carrier density phase diagram of MoS(2), an archetypal band insulator. By quasi-continuous electrostatic carrier doping achieved through a combination of liquid and solid gating, we revealed a large enhancement in the transition temperature T(c) occurring at optimal doping in the chemically inaccessible low-carrier density regime. This observation indicates that the superconducting dome may arise even in doped band insulators.

http://science.sciencemag.org/content/sci/338/6111/1193.full.pdf

Superconducting Dome in a Gate-Tuned Band Insulator

(1967). Electrons in disordered structures. Advances in Physics: Vol. 16, No. 61, pp. 49-144.

Electrons in disordered structures

https://ressearch.files.wordpress.com/2013/02/2006-deville-saiz-tomsia-freeze-casting-of-hydroxyapatite-scaffolds-for-bone-tissue-engineering.pdf

Freeze casting of hydroxyapatite scaffolds for bone tissue engineering.

Oriented Schwann cell growth on micropatterned biodegradable polymer substrates.

A non-planar electronic light-emitting display has a display area divided into a matrix of pixels. Each pixel includes two primary elements, an electronic driver and a light-emitting diode based on a light-emitting polymer. The electronic driver is a thin film transistor device of amorphous silicon formed on the insulating substrate. The diode has a first electrode connected to and driven by the electronic transistor, a layer of light-emitting polymer deposited on the electrode, and an overlying electrode normally biased on. Energization of the driver biases the diode to cause the polymer to emit light. Each pixel is configured with the two-component structure described above, and row and column lines to the matrix of pixels are decoded by the drivers to cause selective illumination of the pixels.

Flexible panel display having thin film transistors driving polymer light-emitting diodes

A method and system for detecting material bound on a surface of a piezoelectric resonator (20) introduces a signal of a constant frequency through the sensing resonator and detects a change in the insertion phase shift of the resonator (20) as a result of the binding of the material being detected on the surface of the resonator (20). Environmental effects on the measurement are effectively canceled by the use of a reference resonator driven by the same input signal (21). A multiple-port sensing device is provided which includes thin-film sensing and reference resonators monolithically formed on a substrate.

Method and system for detecting material using piezoelectric resonators

Enhancement of the superconducting transition temperature near a phase instability in NaxWO3

The electrical resistivities of the nonstoichiometric compounds NaxWO3 have been measured as a function of sodium concentration from x=0.48 to x=0.88, and as a function of temperature from T=4°K to T=873°K. The minimum in electrical resistivity near x=0.75, which had been reported by earlier investigators, was absent in single crystals which were selected to be electrically homogeneous. Above room temperature, the electrical conductivity increased approximately linearly with sodium concentration; at liquid‐helium temperatures, the electrical conductivity increased approximately as the fourth power of sodium concentration.

H. R. Shanks

Papers

Oriented Schwann cell growth on micropatterned biodegradable polymer substrates.

Flexible panel display having thin film transistors driving polymer light-emitting diodes

Method and system for detecting material using piezoelectric resonators

Enhancement of the superconducting transition temperature near a phase instability in NaxWO3

Electrical Resistivity of Cubic Sodium Tungsten Bronze