A large amount of work world-wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si. Much progress has been made following the demonstration in 1990 that highly porous material could emit very efficient visible photoluminescence at room temperature. Since that time, all features of the structural, optical and electronic properties of the material have been subjected to in-depth scrutiny. It is the purpose of the present review to survey the work which has been carried out and to detail the level of understanding which has been attained. The key importance of crystalline Si nanostructures in determining the behaviour of porous Si is highlighted. The fabrication of solid-state electroluminescent devices is a prominent goal of many studies and the impressive progress in this area is described.

The structural and luminescence properties of porous silicon

This review discusses how low-energy, valence excitations created by swift electrons can render information on the optical response of structured materials with unmatched spatial resolution. Electron microscopes are capable of focusing electron beams on sub-nanometer spots and probing the target response either by analyzing electron energy losses or by detecting emitted radiation. Theoretical frameworks suited to calculate the probability of energy loss and light emission (cathodoluminescence) are revisited and compared with experimental results. More precisely, a quantum-mechanical description of the interaction between the electrons and the sample is discussed, followed by a powerful classical dielectric approach that can be in practice applied to more complex systems. We assess the conditions under which classical and quantum-mechanical formulations are equivalent. The excitation of collective modes such as plasmons is studied in bulk materials, planar surfaces, and nanoparticles. Light emission induced by the electrons is shown to constitute an excellent probe of plasmons, combining sub-nanometer resolution in the position of the electron beam with nanometer resolution in the emitted wavelength. Both electron energy-loss and cathodoluminescence spectroscopies performed in a scanning mode of operation yield snap shots of plasmon modes in nanostructures with fine spatial detail as compared to other existing imaging techniques, thus providing an ideal tool for nanophotonics studies.

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Optical excitations in electron microscopy

http://nathan.instras.com/documentDB/paper-69.pdf

Porous silicon: a quantum sponge structure for silicon based optoelectronics

This review is concerned with quantum confinement effects in low-dimensional semiconductor systems. The emphasis is on the optical properties, including luminescence, of nanometre-sized microcrysta...

Low-dimensional systems: quantum size effects and electronic properties of semiconductor microcrystallites (zero-dimensional systems) and some quasi-two-dimensional systems

Quantum-dot-sensitized solar cells (QDSCs) are a promising low-cost alternative to existing photovoltaic technologies such as crystalline silicon and thin inorganic films The absorption spectrum of quantum dots (QDs) can be tailored by controlling their size, and QDs can be produced by low-cost methods Nanostructures such as mesoporous films, nanorods, nanowires, nanotubes and nanosheets with high microscopic surface area, redox electrolytes and solid-state hole conductors are borrowed from standard dye-sensitized solar cells (DSCs) to fabricate electron conductor/QD monolayer/hole conductor junctions with high optical absorbance Herein we focus on recent developments in the field of mono- and polydisperse QDSCs Stability issues are adressed, coating methods are presented, performance is reviewed and special emphasis is given to the importance of energy-level alignment to increase the light to electric power conversion efficiency

/pdf/quantum-dot-sensitized-solar-cells-1m6eozul5p.pdf

Quantum‐Dot‐Sensitized Solar Cells

Optical band gaps, ${E}_{g}$, up to 0.5 eV higher than in single-crystal samples, are observed for chemically deposited films of CdSe and explained in terms of a quantum-size effect, whereby the electrons are localized in individual crystallites. The increase in ${E}_{g}$ depends strongly on deposition temperature, with the greatest increase obtained at the lowest temperature. Annealing at temperatures above the deposition temperature causes a decrease in ${E}_{g}$; this decrease is stronger at higher annealing temperature. Structural studies of the as-deposited layers showed them to be composed of microcrystalline, cubic CdSe, and electron microscopy resolved them into individual crystallites of typically 40--80-A\r{} diameter, depending on deposition temperature. This is the first example reported of a three-dimensional quantum-size effect in a film.

Ana Albu-Yaron

Papers

Three-dimensional quantum-size effect in chemically deposited cadmium selenide films.

Quantum Size Effects in Chemically Deposited, Nanocrystalline Lead Selenide Films

Chemical Solution Deposition of Lead Selenide Films: A Mechanistic and Structural Study

Influence of the electrochemical deposition parameters on the microstructure of MoS2 thin films

Formation and characterization of porous silicon layers for application in multicrystalline silicon solar cells