This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introduced. Then, the various influences of the noble metal, the etchant, temperature, illumination, and intrinsic properties of the silicon substrate (e.g., orientation, doping type, doping level) are presented. The anisotropic and the isotropic etching behaviors of silicon under various conditions are presented. Template-based metal-assisted chemical etching methods are introduced, including templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithography, and block-copolymer masks. The metal-assisted chemical etching of other semiconductors is also introduced. A brief introduction to the application of Si nanostructures obtained by metal-assisted chemical etching is given, demonstrating the promising potential applications of metal-assisted chemical etching. Finally, some open questions in the understanding of metal-assisted chemical etching are compiled.

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Metal-Assisted Chemical Etching of Silicon: A Review

Electrochemical energy storage technology is of critical importance for portable electronics, transportation and large-scale energy storage systems. There is a growing demand for energy storage devices with high energy and high power densities, long-term stability, safety and low cost. To achieve these requirements, novel design structures and high performance electrode materials are needed. Porous 1D nanomaterials which combine the advantages of 1D nanoarchitectures and porous structures have had a significant impact in the field of electrochemical energy storage. This review presents an overview of porous 1D nanostructure research, from the synthesis by bottom-up and top-down approaches with rational and controllable structures, to several important electrochemical energy storage applications including lithium-ion batteries, sodium-ion batteries, lithium-sulfur batteries, lithium-oxygen batteries and supercapacitors. Highlights of porous 1D nanostructures are described throughout the review and directions for future research in the field are discussed at the end.

Porous One-Dimensional Nanomaterials: Design, Fabrication and Applications in Electrochemical Energy Storage.

Cell-material interactions constitute a key fundamental topic in biomaterials study. Various cell cues and matrix cues as well as soluble factors regulate cell behaviors on materials. These factors are coupled with each other as usual, and thus it is very difficult to unambiguously elucidate the role of each regulator. The recently developed material techniques of surface patterning afford unique ways to reveal the underlying science. This paper reviews the pertinent material techniques to fabricate patterns of microscale and nanoscale resolutions, and corresponding cell studies. Some issues are emphasized, such as cell localization on patterned surfaces of chemical contrast, and effects of cell shape, cell size, cell-cell contact, and seeding density on differentiation of stem cells. Material cues to regulate cell adhesion, cell differentiation and other cell events are further summed up. Effects of some physical properties, such as surface topography and matrix stiffness, on cell behaviors are also discussed; nanoscaled features of substrate surfaces to regulate cell fate are summarized as well. The pertinent work sheds new insight into the cell-material interactions, and is stimulating for biomaterial design in regenerative medicine, tissue engineering, and high-throughput detection, diagnosis, and drug screening.

Cell–Material Interactions Revealed Via Material Techniques of Surface Patterning

Metal assisted chemical etching (MacEtch) is a recently developed anisotropic wet etching method that is capable of producing high aspect ratio semiconductor nanostructures from patterned metal film. In this review article, we highlight the characteristics of MacEtch of silicon (Si) including controllability of the produced sidewall roughness, the inherent high aspect ratio, the weak crystal orientation dependence, impurity doping and solution concentration dependent porosity, as well as the applicability of MacEtch to non-Si based semiconductor materials including III–V compound semiconductors. Also reviewed are applications of MacEtch produced high aspect ratio Si nanostructures in photovoltaics, where the p–n junction can be in the planar Si tray, core–shell, or axial geometry, with nanowire, micropillar, or hole arrays serving as light trapping or carrier collection structures. The prospect of using MacEtch to improve the cost and efficiency of photovoltaic cells is discussed.

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Metal assisted chemical etching for high aspect ratio nanostructures: A review of characteristics and applications in photovoltaics

Metal-assisted chemical etching of silicon and nanotechnology applications

A facile fabricating method has been established for large-area uniform silicon nanowires arrays All silicon nanowires obtained were single crystals and epitaxial on the substrate Six kinds of silicon wafers with different types, surface orientations, and doping levels were utilized as starting materials With the catalysis of silver nanoparticles, room-temperature mild chemical etching was conducted in aqueous solution of hydrofluoric acid (HF) and hydrogen peroxide (H2O2) The corresponding silicon nanowires arrays with different morphologies were obtained The silicon nanowires possess the same type and same doping level of the starting wafer All nanowires on the substrate have the same orientation For instance, both (100)- and (111)-oriented p-type wafers produced silicon nanowires in the (100) direction For every kind of silicon wafer, the effect of etching conditions, such as components of etchant, temperature, and time, were systemically investigated This is an appropriate method to produce a

‡ and Shuit-Tong Lee

Papers

Preparation of Large-Area Uniform Silicon Nanowires Arrays through Metal-Assisted Chemical Etching