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Andrei V. Lavrinenko

Researcher at Technical University of Denmark

Publications -  450
Citations -  8521

Andrei V. Lavrinenko is an academic researcher from Technical University of Denmark. The author has contributed to research in topics: Metamaterial & Photonic crystal. The author has an hindex of 44, co-authored 437 publications receiving 7396 citations. Previous affiliations of Andrei V. Lavrinenko include Australian National University & Saint Petersburg State University of Information Technologies, Mechanics and Optics.

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Strained silicon as a new electro-optic material

TL;DR: The strain-induced linear electro-optic effect may be used to remove a bottleneck in modern computers by replacing the electronic bus with a much faster optical alternative.
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Graphene metamaterials based tunable terahertz absorber: effective surface conductivity approach

TL;DR: A graphene based perfect absorber is demonstrated and the properties of graphene wire medium and graphene fishnet metamaterials are investigated and both narrowband and broadband tunable absorbers are demonstrated.
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Photonic crystal waveguides with semi-slow light and tailored dispersion properties

TL;DR: It is realized experimentally a silicon-on-insulator photonic crystal waveguide having nearly constant group velocity ~c(0)/34 in an 11-nm bandwidth below the silica-line.
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Observation of total omnidirectional reflection from a one-dimensional dielectric lattice

TL;DR: In this article, the AlF6/ZnSe multilayer structure developed by means of standard optical technology was found to have a reflection coefficient of more then 99% in the range of incident angles 0°-86° at the wavelength of 632.8nm for s-polarization.
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Transition from Optical Bound States in the Continuum to Leaky Resonances: Role of Substrate and Roughness

TL;DR: In this paper, the authors analyzed the properties of optical bound states in the continuum (BIC) in CMOS-compatible one-dimensional photonic structure based on silicon-on-insulator wafer at telecommunication wavelengths, where the absorption of silicon is negligible.