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Andrew J. Steckl
Researcher at University of Cincinnati
Publications - 428
Citations - 13011
Andrew J. Steckl is an academic researcher from University of Cincinnati. The author has contributed to research in topics: Photoluminescence & Thin film. The author has an hindex of 59, co-authored 424 publications receiving 12015 citations. Previous affiliations of Andrew J. Steckl include Applied Science Private University & Air Force Research Laboratory.
Papers
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Enhanced emission efficiency in organic light-emitting diodes using deoxyribonucleic acid complex as an electron blocking layer
TL;DR: In this paper, a deoxyribonucleic acid (DNA) complex as an electron blocking (EB) material has been demonstrated in both green and blue-emitting organic light-emiting diodes (OLEDs).
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DNA – a new material for photonics?
TL;DR: In this article, the authors have recently discovered that DNA is an exciting new material for fabricating photonic devices with enhanced properties, and they have shown that DNA can be used for DNA fabrication.
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A nearly ideal phosphor-converted white light-emitting diode
Steven C. Allen,Andrew J. Steckl +1 more
TL;DR: In this article, a phosphor-converted light-emitting diode with nearly ideal blue-to-white conversion loss of only 1% was obtained using internal reflection to steer phosphor emission away from lossy surfaces, a reflector material with high reflectivity, and a remotely located organic phosphor having (1) unity quantum efficiency (ηq), (2) homogeneous refractive index to minimize scattering, and (3) refractive matching to the encapsulation to eliminate total internal reflection.
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Superhydrophobic and Oleophobic Fibers by Coaxial Electrospinning
Daewoo Han,Andrew J. Steckl +1 more
TL;DR: The fact that a normally nonelectrospinnable material such as Teflon AF has been successfully electrospun when combined with an electrospinnables core material indicates the potential of coaxial electrospinning to provide a new degree of freedom in terms of material combinations for many applications.
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Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices
TL;DR: In this paper, a review of the fabrication, operation, and applications of rare-earth-doped GaN electroluminescent devices (ELDs) is presented, along with high contrast TDEL devices using a black dielectric.