Highly Reversible Zn Anode Enabled by Controllable Formation of Nucleation Sites for Zn-Based Batteries

Modulating Zn deposition via ceramic-cellulose separator with interfacial polarization effect for durable zinc anode

Effect of post-deposition annealing temperature on RF-sputtered HfO2 thin film for advanced CMOS technology

Novel synthesis of hafnium oxide nanoparticles by precipitation method and its characterization

Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks

The HfO 2 high-k thin films have been deposited on p-type (1 0 0) silicon wafer using RF magnetron sputtering technique. The XRD, AFM and Ellipsometric characterizations have been performed for crystal structure, surface morphology and thickness measurements respectively. The monoclinic structured, smooth surface HfO 2 thin films with 9.45 nm thickness have been used for Al/HfO 2 /p-Si metal–oxide–semiconductor (MOS) structures fabrication. The fabricated Al/HfO2/Si structure have been used for extracting electrical properties viz dielectric constant, EOT, barrier height, doping concentration and interface trap density through capacitance voltage and current–voltage measurements. The dielectric constant, EOT, barrier height, effective charge carriers, interface trap density and leakage current density are determined are 22.47, 1.64 nm, 1.28 eV, 0.93 × 10 10 , 9.25 × 10 11  cm −2  eV −1 and 9.12 × 10 −6  A/cm 2 respectively for annealed HfO 2 thin films.

Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors

In this work, cerium oxide thin films were prepared using cerium chloride heptahydrate, ethanol and citric acid as an additive by sol–gel spin-coating technique and further characterized to study the various properties. Chemical composition of deposited films has been analysed by FTIR which shows existence of CeO2. The samples have been optically characterized using ellipsometry to find refractive index of 2·18 and physical thickness which is measured to be 5·56 nm. MOS capacitors were fabricated by depositing aluminum (Al) metal using the thermal evaporation technique on the top of CeO2 thin films. Capacitance–voltage measurement was carried out to calculate the dielectric constant, flat-band voltage shift of 18·92, 0·3–0·5 V, respectively and conductance–voltage study was carried out to determine the Dit of 1·40 × 1013 eV − 1 cm − 2 at 1 MHz.

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Sol–gel deposited ceria thin films as gate dielectric for CMOS technology

In the present work, we have grown 2.83 nm thin Al2O3 films directly on pre-cleaned p-Si (100) substrate using precursor Trimethyl Aluminium (TMA) with substrate temperature of 300°C in a Plasma Enhanced Atomic Layer Deposition (PEALD) chamber. The MOS capacitors were fabricated by depositing Pt/Ti metal bilayer through shadow mask on Al2O3 high-k by electron beam evaporation system. The MOS devices were characterized to evaluate the electrical properties using a capacitance voltage (CV) set-up. The dielectric constant calculated through the CV analysis is 8.32 for Al2O3 resulting in the equivalent oxide thickness (EOT) of 1.32 nm. The flat-band shift of 0.3 V is observed in the CV curve. This slight positive shift in flat-band voltage is due to the presence of some negative trap charges in Pt/Ti/ALD-Al2O3/p-Si MOS capacitor. The low leakage current density of 3.08 × 10−10 A/cm2 is observed in the JV curve at 1 V. The Si/Al2O3 barrier height Φ
 B
 and the value of J
 FN are calculated to be 2.78 eV and 3.4 × 10−5 A/cm2 respectively.

Anil G. Khairnar

Papers

Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors

Sol–gel deposited ceria thin films as gate dielectric for CMOS technology

Electrical properties of MOS capacitors formed by PEALD grown Al2O3 on silicon

HfO 2 gate dielectric on Ge (1 1 1) with ultrathin nitride interfacial layer formed by rapid thermal NH 3 treatment

Structural and electrical properties of ultra-thin high-k ZrO2 film on nitride passivated Ge(100) prepared by PEALD