Antonio Facchetti

TL;DR: This review summarizes and analyzes recent advances in materials concepts as well as in thin-film fabrication techniques for high- k gate dielectrics when integrated with FSE-compatible semiconductors such as organics, metal oxides, quantum dot arrays, carbon nanotubes, graphene, and other 2D semiconductor types.

TL;DR: In this article, new methods of fabricating metal oxide thin films and nanomaterial-derived metal composite thin films via solution processes at low temperatures (<400°C) were presented.

TL;DR: This is the first demonstration of 2DEG-based homojunction oxide TFTs via band offset achieved by simple polymer doping of the same MO material, and a mobility as high as 30 cm2 V-1 s-1 is achieved on a high-k ZrO2 dielectric in the homoj junction devices.

TL;DR: A highly efficient, cofuel-assisted scalable combustion blade-coating (CBC) process for MO film growth, which involves introducing both a fluorinated fuel and a preannealing step to remove deleterious organic contaminants and promote complete combustion.