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Antonius T. J. van Helvoort

Researcher at Norwegian University of Science and Technology

Publications -  67
Citations -  1709

Antonius T. J. van Helvoort is an academic researcher from Norwegian University of Science and Technology. The author has contributed to research in topics: Nanowire & Chemistry. The author has an hindex of 19, co-authored 52 publications receiving 1475 citations. Previous affiliations of Antonius T. J. van Helvoort include University of Cambridge & SINTEF.

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Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth

TL;DR: This particular GaAs nanowire/graphene hybrid is anticipated to be promising for flexible and low-cost solar cells, and to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter.
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Easy route to superhydrophobic copper-based wire-guided droplet microfluidic systems.

TL;DR: In this article, copper-based superhydrophobic surfaces were produced either by the etching of polycrystalline copper samples along the grain boundaries using etchants common in the microelectronics industry, by electrodeposition of copper films with subsequent nanowire decoration based on thermal oxidization, or by a combination of both.
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Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts.

TL;DR: Low temperature microphotoluminescence measurements showed evidence of quantum confinement of holes in the GaAsSb insert, and a possible mechanism for the different phase transitions is discussed.
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A story told by a single nanowire: optical properties of wurtzite GaAs.

TL;DR: A method for quantifying the optical quality of NWs is suggested, taking into consideration the difference between the room and low temperature integrated PL intensity, and it is demonstrated that Au-assisted GaAs/AlGaAs core-shell NWs can have high PL brightness up to room temperature.
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Rapid Estimation of Catalyst Nanoparticle Morphology and Atomic-Coordination by High-Resolution Z-Contrast Electron Microscopy

TL;DR: This work makes use of recent advances in quantitative dark-field scanning transmission electron microscopy to count the number atoms in each atomic column of a single image from a platinum nanoparticle, which enables high-throughput statistical studies or the analysis of dynamic processes such as facet-restructuring or particle damage.