B
Bjørn-Ove Fimland
Researcher at Norwegian University of Science and Technology
Publications - 127
Citations - 2271
Bjørn-Ove Fimland is an academic researcher from Norwegian University of Science and Technology. The author has contributed to research in topics: Molecular beam epitaxy & Nanowire. The author has an hindex of 23, co-authored 126 publications receiving 2102 citations.
Papers
More filters
Journal ArticleDOI
Vertically Aligned GaAs Nanowires on Graphite and Few-Layer Graphene: Generic Model and Epitaxial Growth
A. Mazid Munshi,D L Dheeraj,Vidar Tonaas Fauske,Dong Chul Kim,Antonius T. J. van Helvoort,Bjørn-Ove Fimland,Helge Weman +6 more
TL;DR: This particular GaAs nanowire/graphene hybrid is anticipated to be promising for flexible and low-cost solar cells, and to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter.
Journal ArticleDOI
Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography
A. M. Munshi,D L Dheeraj,Vidar Tonaas Fauske,Dong Chul Kim,Junghwan Huh,J F Reinertsen,Lyubomir Ahtapodov,Ki-Dong Lee,B. Heidari,A. T. J. van Helvoort,Bjørn-Ove Fimland,Helge Weman +11 more
TL;DR: The combination of NIL and MBE demonstrates the successful heterogeneous integration of highly uniform GaAs NWs on Si, important for fabricating high throughput, large-area position-controlled NW arrays for various optoelectronic device applications.
Journal ArticleDOI
Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts.
D L Dheeraj,Gilles Patriarche,Hailong Zhou,Thang B. Hoang,A F Moses,Sondre Grønsberg,Antonius T. J. van Helvoort,Bjørn-Ove Fimland,Helge Weman +8 more
TL;DR: Low temperature microphotoluminescence measurements showed evidence of quantum confinement of holes in the GaAsSb insert, and a possible mechanism for the different phase transitions is discussed.
Journal ArticleDOI
Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires
TL;DR: In this article, the optical properties of single wurtzite GaAs nanowires grown by molecular beam epitaxy were investigated using high-resolution transmission electron microscopy images.
Journal ArticleDOI
A story told by a single nanowire: optical properties of wurtzite GaAs.
Lyubomir Ahtapodov,J Todorovic,Phillip Olk,Terje Mjåland,Patrick Slåttnes,D L Dheeraj,Antonius T. J. van Helvoort,Bjørn-Ove Fimland,Helge Weman +8 more
TL;DR: A method for quantifying the optical quality of NWs is suggested, taking into consideration the difference between the room and low temperature integrated PL intensity, and it is demonstrated that Au-assisted GaAs/AlGaAs core-shell NWs can have high PL brightness up to room temperature.