A
Anup Pradhan Sakhya
Researcher at Bose Institute
Publications - 42
Citations - 364
Anup Pradhan Sakhya is an academic researcher from Bose Institute. The author has contributed to research in topics: Dielectric & Rietveld refinement. The author has an hindex of 10, co-authored 33 publications receiving 263 citations.
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Electronic and optical properties of cubic SrHfO3 at different pressures: A first principles study
D. P. Rai,Sandeep,A. Shankar,Anup Pradhan Sakhya,T.P. Sinha,Boualem Merabet,Rabah Khenata,Arash Boochani,Shahram Solaymani,Raj Kumar Thapa +9 more
TL;DR: In this paper, the electronic and optical properties of cubic SrHfO3 perovskite under the variation of pressures were investigated by first-principles calculation within the framework of generalized gradient approximation (GGA).
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Investigation of concentration dependent electrical and photocatalytic properties of Mn doped SmFeO3
TL;DR: In this article, the complex impedance and the ac conductivity of SmFe1-xMnxO3 have been studied by the alternating current impedance spectroscopy method, which implies that the materials behave as a semiconductor in the entire temperature range.
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Narrow band gap and optical anisotropy in double perovskite oxide Sm2NiMnO6: A new promising solar cell absorber
TL;DR: In this paper, double perovskite oxide Sm2NiMnO6 (SNMO) nano-particles are characterized by the X-ray diffraction, transmission electron microscopy and UV-visible absorption spectroscopy.
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Electronic and magnetic properties of X2YZ and XYZ Heusler compounds: a comparative study of density functional theory with different exchange-correlation potentials
D. P. Rai,Sandeep,A. Shankar,Anup Pradhan Sakhya,T.P. Sinha,Rabah Khenata,Madhav Prasad Ghimire,R.K. Thapa +7 more
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Spin-induced transition metal (TM) doped SnO 2 a dilute magnetic semiconductor (DMS): A first principles study
TL;DR: A density functional theory employing generalized gradient approximation (GGA) has been used to study the electronic and magnetic properties of Mo doped SnO2 as discussed by the authors, which can be a potential candidate for electron-spin based futuristic devices.