Anura Priyajith Samantilleke

TL;DR: In this article, the preparation of Eu3+ doped MLa2O4 (Mg, Ca, Sr) nanophosphors by a rapid facile gel combustion route was analyzed by their excitation and emission spectra.

Abstract: Ballistic electron emission microscopy (BEEM) has been used to investigate the Au/n-ZnSe contact at high voltage. A statistical barrier height value of 1.63 +/- 0.05 eV is obtained. The metal-insulator-semiconductor structure is invoked to explain domains of low electron transmission. Features appear in BEEM spectra at higher voltages and can be attributed to the density of empty states in the semiconductor. Impact ionization effects are observed when the electron kinetic energy exceeds the band-gap energy. (C) 2000 American Institute of Physics. [S0021-8979(00)02104-6].

TL;DR: In this article, a flexible fluorescence lifetime imaging device was proposed to scan large sample areas with a spatial resolution adjustable from many micrometers down to sub-micrometers and a temporal resolution of 20 picoseconds.

TL;DR: In this paper, a method of fabricating a copper-indium based thin film photovoltaic device comprises the steps of using electrodeposition, depositing a front window layer of a semiconductor material on a suitably configured electrically conductive substrate, doping the window layer to obtain optimum electrical conductivity in the window layers, and following steps (a) and (b) successively electrochemically depositing adjacent copperindium-based semiconductor absorber layers on the windowlayer wherein each absorber layer has a different band gap energy value to an adjacent absor

TL;DR: In this paper, the reverse biased Schottky barrier at the back contact (CdTe/metal interface), caused by the high electron affinity of p-CdTE, along with the nonavailability of metals with adequate work functions, was removed by adding Te to the deposition electrolyte.