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Asif Rahman

Researcher at Philips

Publications -  49
Citations -  3711

Asif Rahman is an academic researcher from Philips. The author has contributed to research in topics: Transcranial direct-current stimulation & Population. The author has an hindex of 25, co-authored 48 publications receiving 3026 citations. Previous affiliations of Asif Rahman include City University of New York & City College of New York.

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Low-Intensity Electrical Stimulation Affects Network Dynamics by Modulating Population Rate and Spike Timing

TL;DR: The data and mechanistic framework provide a functional role for endogenous electric fields, specifically illustrating that modulation of gamma oscillations during theta-modulated gamma activity can result from field effects alone.
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Cellular effects of acute direct current stimulation: somatic and synaptic terminal effects

TL;DR: It is suggested that somatic polarization together with axon terminal polarization may be important for synaptic pathway‐specific modulation of DCS, which underlies modulation of neuronal excitability during transcranial DCS.
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Origins of specificity during tDCS: anatomical, activity-selective, and input-bias mechanisms.

TL;DR: This work defines the origins of specificity based on anatomical and functional factors and describes the ability of tDCS to produce precise, as opposed to diffuse, changes in brain function.
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Effects of weak transcranial alternating current stimulation on brain activity-a review of known mechanisms from animal studies.

TL;DR: The available in vitro and in vivo animal studies that attempt to provide mechanistic explanations for the role of transcranial alternating current stimulation with weak current as a tool for affecting brain function are reviewed.
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Computational Models of Transcranial Direct Current Stimulation

TL;DR: Though the tDCS electrode montage often follows basic rules of thumb, computational forward models of brain current flow provide more accurate insight into detailed current flow patterns and, in some cases, can even challenge simplified electrode-placement assumptions.