B. Amado-Rey

TL;DR: In this paper, a millimeter-wave monolithic integrated circuit (MMIC) has been realized in a 35 nm InAlAs/InGaAs cascode metamorphic high electron mobility transistor (MHEMT) process in grounded coplanar waveguide technology (GCPW).

TL;DR: In this article, the first stacked-FET monolithic microwave integrated circuit (MMIC) power amplifier cell operating at 280 GHz was designed and realized, and three different circuits were fabricated using 50 nm gate length metamorphic high electron mobility transistors (mHEMT) in combination with grounded coplanar waveguide (GCPW) lines with 14 μm ground-to-ground spacing.

TL;DR: In this article, a driver amplifier operating at 200 GHz has been designed and manufactured with compact size, high gain, broadband performance and high power added efficiency (PAE) with a monolithic microwave integrated circuit (MMIC).

TL;DR: In this article, five different versions of grounded coplanar waveguide (GCPW) branch-line couplers on GaAs were EM simulated, processed and investigated for operation in G-band (140-220 GHz), based on different layer structures (including 2 or 3 metallization layers) and layouts.

TL;DR: In this article, a balanced millimeter-wave monolithic integrated circuit (MMIC) medium power amplifier (MPA) is presented, where a grounded coplanar waveguide (GCPW) technology and a compact cascode configuration were adopted to achieve high gain and high output power at the WR-4 waveguide band (170-260 GHz).