Proceedings ArticleDOI
A 200 GHz driver amplifier in metamorphic HEMT technology
B. Amado-Rey,Y. Campos-Roca,Stephan Maroldt,Axel Tessmann,Hermann Massler,Arnulf Leuther,Michael Schlechtweg,Oliver Ambacher +7 more
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TLDR
In this article, a driver amplifier operating at 200 GHz has been designed and manufactured with compact size, high gain, broadband performance and high power added efficiency (PAE) with a monolithic microwave integrated circuit (MMIC).Abstract:
A driver amplifier operating at 200 GHz has been design and manufactured with compact size, high gain, broadband performance and high power added efficiency (PAE). This monolithic microwave integrated circuit (MMIC) is realized in grounded coplanar waveguides (GCPW) technology in conjunction with a 35 nm gate length metamorphic high electron mobility transistor technology (mHEMT). The four-stage driver amplifier provides more than 20 dB linear gain between 180 GHz and 270 GHz (40 % bandwidth) and PAE higher than 3.3% with more than 7.4 dBm saturated output power at 200 GHz.read more
Citations
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Proceedings ArticleDOI
A broadband 175–245 GHz balanced medium power amplifier using 50-nm mHEMT technology
B. Amado-Rey,Y. Campos-Roca,Christian Friesicke,Axel Tessmann,Hermann Massler,Sandrine Wagner,Arnulf Leuther,Michael Schlechtweg,Oliver Ambacher +8 more
TL;DR: In this article, a balanced millimeter-wave monolithic integrated circuit (MMIC) medium power amplifier (MPA) is presented, where a grounded coplanar waveguide (GCPW) technology and a compact cascode configuration were adopted to achieve high gain and high output power at the WR-4 waveguide band (170-260 GHz).
Journal ArticleDOI
Efficient EM Simulation of GCPW Structures Applied to a 200-GHz mHEMT Power Amplifier MMIC
Y. Campos-Roca,B. Amado-Rey,Sandrine Wagner,Arnulf Leuther,A. Bangert,Rafael Gómez-Alcalá,Axel Tessmann +6 more
TL;DR: In this paper, the behavior of grounded coplanar waveguide (GCPW) structures in the upper millimeter-wave range is analyzed by using full-wave electromagnetic (EM) simulations.
Proceedings ArticleDOI
A 90–120 GHz driver amplifier with 70nm InP PHEMT
Liu Jun,Yu Weihua,Lv Xin +2 more
TL;DR: In this paper, a three-stage driver amplifier with a 70nm InAlAs/InGaAs/INP pseudomorphic high electronmobility transistor (PHEMT) technology is presented.
References
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Journal ArticleDOI
Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar
Axel Tessmann,Ingmar Kallfass,Arnulf Leuther,Hermann Massler,M. Kuri,M. Riessle,M. Zink,Rainer Sommer,Alfred Wahlen,Helmut Essen,Volker Hurm,Michael Schlechtweg,Oliver Ambacher +12 more
TL;DR: The development of advanced W-band and G-band millimeter-wave monolithic integrated circuits (MMICs) and modules for use in a high-resolution radar system operating at 210 GHz have been presented.
Proceedings ArticleDOI
A 180mW InP HBT Power Amplifier MMIC at 214 GHz
TL;DR: In this article, a solid state power amplifier MMIC is demonstrated with 180mW of saturated output power at 214GHz, from an unthinned die, and a small signal S21 gain of 22.0dB.
Journal ArticleDOI
High-gain cascode MMICs in coplanar technology at W-band frequencies
TL;DR: In this paper, a compact high-gain W-band multistage amplifier MMIC was developed in coplanar technology using 0.15 /spl mu/m AlGaAs-InGaAs/GaAs PM-HEMTs.
Proceedings ArticleDOI
Very high resolution radar at 300 GHz
Michael Caris,Stephan Stanko,Alfred Wahlen,Rainer Sommer,Jorn Wilcke,Nils Pohl,Arnulf Leuther,Axel Tessmann +7 more
Journal ArticleDOI
A 200 GHz Monolithic Integrated Power Amplifier in Metamorphic HEMT Technology
TL;DR: In this paper, a millimeter-wave monolithic integrated circuit power amplifier operating in the frequency range between 186 and 212 GHz is presented, dedicated to high-resolution imaging radar and communication systems, is realized in a 100 nm gate length metamorphic high electron mobility transistor technology.