A 1.5-V 100-mA capacitor-free CMOS low-dropout regulator (LDO) for system-on-chip applications to reduce board space and external pins is presented. By utilizing damping-factor-control frequency compensation on the advanced LDO structure, the proposed LDO provides high stability, as well as fast line and load transient responses, even in capacitor-free operation. The proposed LDO has been implemented in a commercial 0.6-/spl mu/m CMOS technology, and the active chip area is 568 /spl mu/m/spl times/541 /spl mu/m. The total error of the output voltage due to line and load variations is less than /spl plusmn/0.25%, and the temperature coefficient is 38 ppm//spl deg/C. Moreover, the output voltage can recover within 2 /spl mu/s for full load-current changes. The power-supply rejection ratio at 1 MHz is -30 dB, and the output noise spectral densities at 100 Hz and 100 kHz are 1.8 and 0.38 /spl mu/V//spl radic/Hz, respectively.

A capacitor-free CMOS low-dropout regulator with damping-factor-control frequency compensation

A design system has been developed which is able to design transconductance amplifiers, operational amplifiers, low-noise BIMOS amplifiers, voltage and current references, quartz oscillators, comparators, and oversampled A/D converters including their digital decimation filter starting from building-block and technology specifications. This design system, called Interactive Design for Analog Circuits (IDAC), is able to size a library of analog schematics (actually more than 40) as a function of technology (p-well and n-well CMOS) and desired building-block specifications. IDAC also generates a complete data sheet, an input file for SPICE2, and an input file for the analog layout program ILAC.

IDAC: an interactive design tool for analog CMOS circuits

Sensing systems such as biomedical implants, infrastructure monitoring systems, and military surveillance units are constrained to consume only picowatts to nanowatts in standby and active mode, respectively. This tight power budget places ultra-low power demands on all building blocks in the systems. This work proposes a voltage reference for use in such ultra-low power systems, referred to as the 2T voltage reference, which has been demonstrated in silicon across three CMOS technologies. Prototype chips in 0.13 μm show a temperature coefficient of 16.9 ppm/°C (best) and line sensitivity of 0.033%/V, while consuming 2.22 pW in 1350 μm2. The lowest functional Vdd 0.5 V. The proposed design improves energy efficiency by 2 to 3 orders of magnitude while exhibiting better line sensitivity and temperature coefficient in less area, compared to other nanowatt voltage references. For process spread analysis, 49 dies are measured across two runs, showing the design exhibits comparable spreads in TC and output voltage to existing voltage references in the literature. Digital trimming is demonstrated, and assisted one temperature point digital trimming, guided by initial samples with two temperature point trimming, enables TC <; 50 ppm/°C and ±0.35% output precision across all 25 dies. Ease of technology portability is demonstrated with silicon measurement results in 65 nm, 0.13 μm, and 0.18 μm CMOS technologies.

A Portable 2-Transistor Picowatt Temperature-Compensated Voltage Reference Operating at 0.5 V

Devices available in digital oriented CMOS processes are reviewed, with emphasis on the various modes of operation of a standard transistor and their respective merits, and on additional specifications required to apply devices in analog circuits. Some basic compatible analog circuit techniques and their related tradeoffs are then surveyed by means of typical examples. The noisy environment due to cohabitation on the chip with digital circuits is briefly evoked.

The Design of High-Performance Analog Circuits on Digital CMOS Chips

An extreme low power voltage reference generator operating with a supply voltage ranging from 0.9 to 4 V has been implemented in AMS 0.35-mum CMOS process. The maximum supply current measured at the maximum supply voltage and at 80degC is 70 nA. A temperature coefficient of 10 ppm/degC is achieved as the combined effect of 1) a perfect suppression of the temperature dependence of mobility; 2) the compensation of the channel length modulation effect on the temperature coefficient; and 3) the absence of the body effect. The power supply rejection ratio without any filtering capacitor at 100 Hz and 10 MHz is lower than -53 and -42 dB, respectively. The occupied chip area is 0.045 mm2.

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A Sub-1-V, 10 ppm/ $^{\circ}$ C, Nanopower Voltage Reference Generator

A voltage reference in CMOS technology is based upon transistor pairs of the same type except for the opposite doping type of their polysilicon gates. At identical drain currents, the gate voltage difference, close to the silicon bandgap, is 1.2 V/spl plusmn/0.06 V. Circuits for a positive and for a negative voltage reference are presented. Digital voltage tuning improves accuracy. Temperature compensation is provided by proper choice of current ratio or by means of an auxiliary circuit. Voltage drift is about 300 ppm//spl deg/C without compensation, and can be reduced to /spl plusmn/30 ppm//spl deg/C. The circuits work with a supply voltage of 2-10 V and draw a current that is less than 1 /spl mu/A.

MOS voltage reference based on polysilicon gate work function difference

http://ieeexplore.ieee.org/iel5/5468926/5468927/05468978.pdf

B. Gerber

Papers

MOS voltage reference based on polysilicon gate work function difference

MOS Voltage Reference based on Polysilicon Gate Work Function Difference