This review covers important advances in recent years in the physics of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film form. The authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this the review covers the enormous progress that has been made in the first-principles computational approach to understanding ferroelectrics. The authors then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, this review ends with a look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in nonconventional nanoscale geometries.

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Physics of thin-film ferroelectric oxides

Memristors are devices whose dynamic properties are of interest because they can mimic the operation of biological synapses. The demonstration that ferroelectric domains in tunnel junctions behave like memristors suggests new approaches for designing neuromorphic circuits.

A ferroelectric memristor

We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage characteristics of FTJs are analyzed under the assumption that the direct electron tunneling represents the dominant conduction mechanism. First, the influence of converse piezoelectric effect inherent in ferroelectric materials on the tunnel current is described. The calculations show that the lattice strains of piezoelectric origin modify the current-voltage relationship owing to strain-induced changes of the barrier thickness, electron effective mass, and position of the conduction-band edge. Remarkably, the conductance minimum becomes shifted from zero voltage due to the piezoelectric effect, and a strain-related resistive switching takes place after the polarization reversal in a ferroelectric barrier. Second, we analyze the influence of the internal electric field arising due to imperfect screening of polarization charges by electrons in metal electrodes. It is shown that, for asymmetric FTJs, this depolarizing-field effect also leads to a considerable change of the barrier resistance after the polarization reversal. However, the symmetry of the resulting current-voltage loop is different from that characteristic of the strain-related resistive switching. The crossover from one to another type of the hysteretic curve, which accompanies the increase of FTJ asymmetry, is described taking into account both the strain and depolarizing-field effects. It is noted that asymmetric FTJs with dissimilar top and bottom electrodes are preferable for the non-volatile memory applications because of a larger resistance on/off ratio.

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Theoretical current-voltage characteristics of ferroelectric tunnel junctions

The electroresistance displayed by ferroelectric tunnel junctions could be used for non-volatile computer memories and other computing applications. Here, the authors show that effects from ferroelectric–electrode interfaces can have a strong positive impact on the electroresistance in such junctions.

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Giant electrode effect on tunnelling electroresistance in ferroelectric tunnel junctions

In this letter we report on the effect of thickness scaling in model PbZr0.2Ti0.8O3(PZT)∕SrRuO3 heterostructures. Although theoretical models for thickness scaling have been widely reported, direct quantitative experimental data for ultrathin perovskite (<10nm) films in the presence of real electrodes have still not been reported. In this letter we show a systematic quantitative experimental study of the thickness dependence of switched polarization in (001) epitaxial PZT films, 4to80nm thick. A preliminary model based on a modified Landau Ginzburg approach suggests that the nature of the electrostatics at the ferroelectric–electrode interface plays a significant role in the scaling of ferroelectric thin films.

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Size effects in ultrathin epitaxial ferroelectric heterostructures

The polarization reversal in single-crystalline ferroelectric films has been investigated experimentally and theoretically. The hysteresis loops were measured for Pb(Zr0.52Ti0.48)O3 films with thicknesses ranging from 8 to 250 nm. These films were grown epitaxially on SrRuO3 bottom electrodes deposited on SrTiO3 substrates. The measurements using Pt top electrodes showed that the coercive field Ec increases drastically as the film becomes thinner, reaching values as high as Ec≈1200 kV/cm. To understand this observation, we calculated the thermodynamic coercive field Eth of a ferroelectric film as a function of the misfit strain Sm in an epitaxial system and showed that Eth strongly depends on Sm. However, the coercive field of ultrathin films, when measured at high frequencies, exceeds the calculated thermodynamic limit. Since this is impossible for an intrinsic coercive field Ec, we conclude that measurements give an apparent Ec rather than the intrinsic one. An enormous increase of apparent coercive fie...

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Coercive field of ultrathin Pb(Zr0.52Ti0.48)O3 epitaxial films

Improved PbZr0.52Ti0.48O3 film quality on SrRuO3/SrTiO3 substrates

Superconducting circuits based upon Rapid Single Flux Quantum (RSFQ) Logic are an interesting approach for future digital electronics with clock frequencies in the range of 100 GHz. Our intention is to increase the integration density of such circuits. Therefore we have successfully fabricated and tested an RSFQ-circuit based on a new kind of stacked three terminal device, henceforth called a "stacktron". A stacktron consists of two vertically arranged all-niobium tunnel junctions, each separately shunted by a thin film resistor, and an access to the intermediate niobium layer. An RSFQ frequency divider (T-flip-flop) including two stacktrons has been tested up to 20 GHz. As a shunt resistor we used Pd/Au, so that /spl beta//sub c/<1 and the IV-curve is nonhysteretic. The junctions showed a current density of approximately 250 A/cm/sup 2/. The I/sub c/R/sub n/-product was 100 /spl mu/V. These first steps toward a three dimensional (3D) RSFQ architecture will be discussed in the framework of highly integrated and complex RSFQ-circuits.

B. Hermanns

Papers

Coercive field of ultrathin Pb(Zr0.52Ti0.48)O3 epitaxial films

Improved PbZr0.52Ti0.48O3 film quality on SrRuO3/SrTiO3 substrates

Experimental realization of a 3D integrated RSFQ T-flip-flop using stacktrons