Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

Power semiconductor devices and methods of manufacture

The QRS detection algorithm is an essential part of any computer-based system for the analysis of ambulatory ECG recordings. This review asserts that most one-channel QRS detectors described in the literature can be considered as having the same basic structure. A discussion of some of the current detection schemes is presented with regard to this structure. Some additional features of QRS detectors are mentioned. The evaluation of performance and the problem of multichannel detection, which is now gaining importance, are also briefly treated.

Software QRS detection in ambulatory monitoring--a review.

In accordance with an embodiment of the present invention, a MOSFET includes a first semiconductor region of a first conductivity type, a gate trench which extends into the first semiconductor region, and a source trench which extends into the first semiconductor region. The source trench is laterally spaced from the gate trench.

Dual trench power MOSFET

A power device includes a semiconductor region which in turn includes a plurality of alternately arranged pillars of first and second conductivity type. Each of the plurality of pillars of second conductivity type further includes a plurality of implant regions of the second conductivity type arranged on top of one another along the depth of pillars of second conductivity type, and a trench portion filled with semiconductor material of the second conductivity type directly above the plurality of implant regions of second conductivity type.

Superjunction Structures for Power Devices and Methods of Manufacture

Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.

Trench-based power semiconductor devices with increased breakdown voltage characteristics

By merging the channel regions of two-junction field-effect transistors with the collector region of a bipolar junction transistor (BJT), one achieves a quasi-cascode configuration called a Channel-Collector Transistor (CCT). Its terminal properties are those of a modified, improved bipolar transistor. Prototype devices have been fabricated with common-emitter current gain (β F ) in excess of 1200 while still maintaining the common-emitter, open-base breakdown voltage (BV CE0 ) greater than 140 V and the output resistance r 0 typically greater than 200 kΩ. The present brief describes an efficient, qualitative equivalent circuit for the structure and also presents an experimental device graphically illustrating the CCT's advantages and disadvantages when compared to a conventional BJT.

B.L. Grung

Papers

Channel-collector transistors