B. M. Melnick

TL;DR: By combining Auger data on the width of an oxygen depletion layer near the Pt electrodes with a modified Langmuir-Child law for the leakage current, this paper deduced parameters related to the space charge density and field in 210nm-thick PbZr1−xTixO3 memories.

TL;DR: In this article, a theoretical model of fatigue in ferroelectric thin-film memories based upon impact ionization (e.g., Ti+4 to Ti+3 conversion in PbZr1−xTixO3), resulting in dendritic growth of oxygen-deficient filaments, is presented.

TL;DR: In this article, an optimized sol-gel PZT process was developed and characterized for use in ferroelectric memories, where the pore size was controlled by hydrolysis and different heat treatments at various stages during drying and annealing cycles.

TL;DR: In this article, an equivalent circuit model for PZT thin film capacitors made by sol-gel spin coating with Pt electrodes was developed for electrical properties and an estimate of the space charge concentration at the surface and inner grain boundary region was made.

TL;DR: In this article, the state-of-the-art device data in the following regimes: (1) hysteresis versus temperature and frequency; (2) temperature dependent i-t; (3) polarization versus applied voltage; (4) I-V characteristics over temperature using triangular voltage sweep (TVS) stress; (5) static dielectric constant versus temperature, frequency, leakage current; (6) time dependent breakdown under constant d.c. bias; (7) fatigue at varying temperatures; and (8) retention data.