B
Balwinder Raj
Researcher at Dr. B. R. Ambedkar National Institute of Technology Jalandhar
Publications - 176
Citations - 1697
Balwinder Raj is an academic researcher from Dr. B. R. Ambedkar National Institute of Technology Jalandhar. The author has contributed to research in topics: Engineering & Threshold voltage. The author has an hindex of 18, co-authored 132 publications receiving 1019 citations. Previous affiliations of Balwinder Raj include Indian Institutes of Information Technology & Indian Institute of Technology Roorkee.
Papers
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A novel robust exclusive-OR function implementation in QCA nanotechnology with energy dissipation analysis
TL;DR: This paper presents a novel two-input Exclusive-OR gate implementation in quantum-dot cellular automata nanotechnology with minimum area and power dissipation as compared to previous designs and simulation results verified that the proposed design offers significant improvements in terms of area, latency, energy dissipation and structural implementation requirements.
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Label Free Detection of Biomolecules Using Charge-Plasma-Based Gate Underlap Dielectric Modulated Junctionless TFET
Girish Wadhwa,Balwinder Raj +1 more
TL;DR: In this paper, a charge-plasma-based gate underlap dielectric modulated junctionless tunnel field effect transistor (DM-JLTFET) was proposed for biomolecule detection.
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Recent Advances and Progress in Development of the Field Effect Transistor Biosensor: A Review
TL;DR: The present paper reports that following integrated multidisciplinary approaches and switching to nanotechnology in designing of FET-based biosensors can offer a lot of improvements in the practical key factors (such as low cost and reliability) and opportunities for the biosensor in the marketplace.
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Parametric Variation Analysis of Symmetric Double Gate Charge Plasma JLTFET for Biosensor Application
Girish Wadhwa,Balwinder Raj +1 more
TL;DR: In this paper, a gate underlap dielectric modulated junctionless tunnel field effect transistor (CPB DM-JLTFET) was proposed for label free electrical recognition of biomolecules.
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Nanoscale FinFET Based SRAM Cell Design: Analysis of Performance Metric, Process Variation, Underlapped FinFET, and Temperature Effect
TL;DR: In this paper, the effect of process variation on the SRAM cell performance was analyzed using Monte Carlo simulation on HSPICE, and the authors also analyzed the effects of temperature on noise margins and static power for FinFET based SRAM cells.