Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

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Spintronics: Fundamentals and applications

The reduction of graphene oxide

Since the discovery of mechanically exfoliated graphene in 2004, research on ultrathin two-dimensional (2D) nanomaterials has grown exponentially in the fields of condensed matter physics, material science, chemistry, and nanotechnology. Highlighting their compelling physical, chemical, electronic, and optical properties, as well as their various potential applications, in this Review, we summarize the state-of-art progress on the ultrathin 2D nanomaterials with a particular emphasis on their recent advances. First, we introduce the unique advances on ultrathin 2D nanomaterials, followed by the description of their composition and crystal structures. The assortments of their synthetic methods are then summarized, including insights on their advantages and limitations, alongside some recommendations on suitable characterization techniques. We also discuss in detail the utilization of these ultrathin 2D nanomaterials for wide ranges of potential applications among the electronics/optoelectronics, electrocat...

Recent Advances in Ultrathin Two-Dimensional Nanomaterials

Approaches, Derivatives and Applications Vasilios Georgakilas,† Michal Otyepka,‡ Athanasios B. Bourlinos,‡ Vimlesh Chandra, Namdong Kim, K. Christian Kemp, Pavel Hobza,‡,§,⊥ Radek Zboril,*,‡ and Kwang S. Kim* †Institute of Materials Science, NCSR “Demokritos”, Ag. Paraskevi Attikis, 15310 Athens, Greece ‡Regional Centre of Advanced Technologies and Materials, Department of Physical Chemistry, Faculty of Science, Palacky University Olomouc, 17. listopadu 12, 771 46 Olomouc, Czech Republic Center for Superfunctional Materials, Department of Chemistry, Pohang University of Science and Technology, San 31, Hyojadong, Namgu, Pohang 790-784, Korea Institute of Organic Chemistry and Biochemistry, Academy of Sciences of the Czech Republic, v.v.i., Flemingovo naḿ. 2, 166 10 Prague 6, Czech Republic

Functionalization of Graphene: Covalent and Non-Covalent Approaches, Derivatives and Applications

Most electronic devices exploit the electric charge of electrons, but it is also possible to build devices that rely on other properties of electrons. Spintronic devices, for example, make use of the spin of electrons. Valleytronics is a more recent development that relies on the fact that the conduction bands of some materials have two or more minima at equal energies but at different positions in momentum space. To make a valleytronic device it is necessary to control the number of electrons in these valleys, thereby producing a valley polarization. Single-layer MoS(2) is a promising material for valleytronics because both the conduction and valence band edges have two energy-degenerate valleys at the corners of the first Brillouin zone. Here, we demonstrate that optical pumping with circularly polarized light can achieve a valley polarization of 30% in pristine monolayer MoS(2). Our results, and similar results by Mak et al., demonstrate the viability of optical valley control and valley-based electronic and optoelectronic applications in MoS(2) monolayers.

Valley polarization in MoS2 monolayers by optical pumping

Uni- and bi-directional light-induced switching of diarylethenes on gold nanoparticles

The recent observation of a fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron–electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are limited to only a few metals (Au, Pd, Pt, Cr, and Nb) because only those are not attacked by the reactive acid etching fabrication step. Here we show a new technique that leads to mechanically stable suspended high mobility graphene devices and is compatible with almost any type of contact material. The graphene devices prepared on a polydimethylglutarimide based organic resist show mobilities as high as 600.000 cm2/Vs at an electron carrier density of n = 5.0 × 109 cm−2 at 77 K. This technique paves the way toward complex suspended graphene based spintronic, superconducting, and other types of devices.

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Large yield production of high mobility freely suspended graphene electronic devices on a polydimethylglutarimide based organic polymer

We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau(s) in monolayer graphene, while the spin diffusion coefficient D-s is strongly reduced compared to typical results on exfoliated graphene. The increase of tau(s) is probably related to the changed substrate, while the cause for the small value of D-s remains an open question.

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Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)

Spin insulatronics covers efforts to generate, detect, control, and utilize high-fidelity pure spin currents and excitations inside magnetic insulators. Ultimately, the new findings may open doors for pure spin-based information and communication technologies. The aim is to replace moving charges with dynamical entities that utilize low-dissipation coherent and incoherent spin excitations in antiferromagnetic and ferromagnetic insulators. The ambition is that the new pure spin-based system will suffer reduced energy losses and operate at high frequencies. In magnetic insulators, there are no mobile charge carriers that can dissipate energy. Integration with conventional electronics is possible via interface exchange interactions and spin-orbit couplings. In this way, the free electrons in the metals couple to the localized spins in the magnetic insulators. In turn, these links facilitate spin-transfer torques and spin-orbit torques across metal-insulator interfaces and the associated phenomena of spin-pumping and charge-pumping. The interface couplings also connect the electron motion inside the metals with the spin fluctuations inside the magnetic insulators. These features imply that the system can enable unprecedented control of correlations resulting from the electron-magnon interactions. We review recent developments to realize electric and thermal generation, manipulation, detection, and control of pure spin information in insulators.

Spin Insulatronics

We studied the nonlocal transport behavior of both electrically and thermally excited magnons in yttrium iron garnet (YIG) as a function of its thickness. For electrically injected magnons, the nonlocal signals decrease monotonically as the YIG thickness increases. For the nonlocal behavior of the thermally generated magnons, or the nonlocal spin Seebeck effect (SSE), we observed a sign reversal which occurs at a certain heater-detector distance, and it is influenced by both the opacity of the YIG/heater interface and the YIG thickness. Our nonlocal SSE results can be qualitatively explained by the bulk-driven SSE mechanism together with the magnon diffusion model. Using a two-dimensional finite element model (2D-FEM), we estimated the bulk spin Seebeck coefficient of YIG at room temperature. The quantitative disagreement between the experimental and modeled results indicates more complex processes going on in addition to magnon diffusion and relaxation, especially close to the contacts.

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Bart J. van Wees

Papers

Uni- and bi-directional light-induced switching of diarylethenes on gold nanoparticles

Large yield production of high mobility freely suspended graphene electronic devices on a polydimethylglutarimide based organic polymer

Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)

Spin Insulatronics

Influence of yttrium iron garnet thickness and heater opacity on the nonlocal transport of electrically and thermally excited magnons