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Bassem S. El-Dasher
Researcher at Carnegie Mellon University
Publications - 9
Citations - 388
Bassem S. El-Dasher is an academic researcher from Carnegie Mellon University. The author has contributed to research in topics: Grain boundary & Electron backscatter diffraction. The author has an hindex of 4, co-authored 9 publications receiving 372 citations.
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Journal ArticleDOI
Viewpoint: experimental recovery of geometrically necessary dislocation density in polycrystals
TL;DR: In this article, the application of electron backscattering diffraction methods to recover estimates of the geometrically necessary dislocation density is described and the limitations of the method arising from the opacity of crystalline materials and the spatial and angular resolution limits are discussed.
Journal ArticleDOI
Statistically representative three-dimensional microstructures based on orthogonal observation sections
TL;DR: In this paper, a statistically representative 3D model microstructure for input into computer simulations using the geometric and crystallographic observations from two orthogonal sections through an aluminum polycrystal is described.
Book ChapterDOI
Studies on the Accuracy of Electron Backscatter Diffraction Measurements
TL;DR: In this article, a single crystal was used to measure orientation fields from a silicon single crystal and the orientation dispersion was 1° Disorientation correlation maps revealed anisotropy in the spatial variation in measured orientation.
Grain Boundary Property Determination through Measurement of Triple Junction Geometry and Crystallography
Brent L. Adams,David P. Casasent,Melik C. Demirel,Bassem S. El-Dasher,David Kinderlehrer,Chun Liu,Irene Livshits,Florin B. Manolache,D. E. Mason,A. Morawiec,W. W. Mullins,S. Ozdemir,Gregory S. Rohrer,Anthony D. Rollett,David M. Saylor,Shlomo Ta'asan,Ashit Talukder,Chialin T. Wu,C. C. Yang,W. Yang +19 more
TL;DR: In this paper, the authors present a method to extract properties such as energy and mobility as a function of grain boundary type from the geometry and crystallography of triple junctions between grain boundaries.
Advances in Experimental Method and Analysis for Estimation of Geometrically-Necessary Dislocations
TL;DR: In this article, the geometrically necessary dislocation (GND) tensor tensor was determined based on electron backscattering diffraction for directionally-solidified 99.999% aluminum.