http://rupert.eng.uci.edu/Publications/Acta%20Mat_nanocrystalline%20SSS_2011.pdf

Enhanced solid solution effects on the strength of nanocrystalline alloys

Sputtering deposition of nanoparticles onto liquid substrates: Recent advances and future trends

Transparent heat regulating (THR) materials and coatings for energy saving window applications: Impact of materials design, micro-structural, and interface quality on the THR performance

Structural, optical and electrical properties of In doped CdO thin films for optoelectronic applications

We have systematically investigated the dependence of tunnel magnetoresistance in MgO-based magnetic tunnel junctions as a function of Ar pressure during sputtering. The MgO surface roughness, and therefore device magnetoresistance, depends strongly on Ar gas pressure. Magnetoresistance of up to 236% was achieved at room temperature after thermal annealing at 425°C and with optimal sputtering conditions. The long mean free path of target atoms at low background pressures increases their kinetic energy at the substrate surface, resulting in smooth surface morphology and correspondingly improved device performance.

Effect of film roughness in MgO-based magnetic tunnel junctions

Atomic force microscopy (AFM) and X-ray diffraction (XRD) investigations of copper thin films prepared by dc magnetron sputtering technique

Thickness dependence of the structural and electrical properties of copper films deposited by dc magnetron sputtering technique

We investigated the effects of sputtering power and deposition pressure on the electrical and structural properties of dc magnetron sputter-deposited copper films on p-type silicon grown at room temperature. Results from our experiments showed that the deposition rate of the copper films increased proportionally with the sputtering power. Sputtering power also affected the structural properties of the copper films through the surface diffusion mechanism of the adatom. From the scanning electron microscopy surface analysis, the high sputtering power favored the formation of continuous film. The poor microstructure with voided boundaries as a result of low sputtering power deposition was manifested with the high resistivity obtained. The deposition rate was found also depending on the deposition pressure. The deposition pressure had the contrary effect on structural properties of copper films in which high deposition pressure favored the formation of voided boundaries film structure due to the shadowing effect, which varied with different deposition pressure.

Bee-San Teo

Papers

Atomic force microscopy (AFM) and X-ray diffraction (XRD) investigations of copper thin films prepared by dc magnetron sputtering technique

Thickness dependence of the structural and electrical properties of copper films deposited by dc magnetron sputtering technique

Sputtering power and deposition pressure effects on the electrical and structural properties of copper thin films

Investigation into the influence of direct current (DC) power in the magnetron sputtering process on the copper crystallite size

Effects of substrate temperature on electrical and structural properties of copper thin films