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Showing papers by "Benjamin Lax published in 1961"


Journal ArticleDOI
TL;DR: In this article, a theory of the effect of applied magnetic field transverse and parallel to the direction of propagation was discussed for InSb, InAs, and HgSe.
Abstract: Magnetoreflection experiments involving both intraband and interband transitions can provide valuable information about the electronic band structure of semiconductors. In the intraband experiments, performed near the plasma reflection edge, the application of a magnetic field splits the edge and results in the formation of two minima separated by the cyclotron frequency. It is thus possible to determine the cyclotron frequency directly, at room temperature, and for high carrier concentrations. When scattering losses are taken into account in the theory, it becomes possible to determine the carrier concentration, scattering time, and effective mass from the optical measurements alone. The theory of the effect is discussed for applied magnetic field transverse and parallel to the direction of propagation, and experimental results are presented for InSb, InAs, and HgSe. A consistent fit to Kane's theory for the variation of mass with concentration in InSb is obtained when previously published data have been...

38 citations



Journal ArticleDOI
TL;DR: In this article, a quantum theoretical result associated with the direct transition has been developed to explain the phenomenon and the treatment has been extended to include forbidden transitions which are readily applicable to such materials as InAs, GaAs, and GaSb where interband transitions between the splitoff valence bands have been observed.
Abstract: Experimental investigation of Faraday rotation in III–V compounds has exhibited a striking singularity at photon frequencies just below the energy gap. A quantum theoretical result associated with the direct transition has been developed to explain the phenomenon. The treatment has been extended to include forbidden transitions which are readily applicable to such materials as InAs, GaAs, and GaSb where interband transitions between the split‐off valence bands have been observed. The treatment for observing Faraday rotation by reflection has also been considered and experimental results in InSb at optical frequencies will be presented. The calculations have also been performed for degenerate semiconductors at low temperature.

13 citations