Showing papers by "Benoit Deveaud published in 1983"
TL;DR: In this article, a new Cu-related photoluminescence band in InP is reported, which consists of a sharp zero-phonon line at 12889 eV with sharp LO and 'gap mode' local phonon replicas to lower energy superimposed on a broad vibronic background.
Abstract: A new Cu-related photoluminescence band in InP is reported It consists of a sharp zero-phonon line at 12889 eV with sharp LO and 'gap mode' local phonon replicas to lower energy superimposed on a broad vibronic background Zeeman studies show that the recombination process arises from an exciton bound to a neutral isoelectronic centre Electron and hole g-values of 127 and 212 respectively are deduced, with both electron and hole having spin 1/2 The very strong diamagnetic shift of the spectrum is found to be equal to that of a shallow donor electron in InP This demonstrates clearly that the hole is tightly bound in the short-range potential of the centre with binding energy EBh=1275 meV and that the electron is then weakly bound in the Coulomb field of the hole (EBe=73 meV), so that the overall behaviour is of an isoelectronic donor The thermal activation energy of the vibronic sideband of the luminescence is found to be 135+or-10 meV, in good agreement with the spectroscopic value of the hole binding energy
19 citations
TL;DR: In this paper, the authors performed experiments on InP/V single crystals extracted from a polycristalline ingot grown in a two zones gradient freeze furnace; in photoluminescence (PL) they observe a band with two zero phonon lines at 5692.5 cm -1 and 5705.5cm -1.
15 citations
TL;DR: In this paper, it was shown that the presence of a strong trigonal field is necessary to explain the zero field splitting and the reduction of Jahn-Teller energy and the occurrence of vibronic lines labelled I and J.
Abstract: We present here the preliminary results of our calculations on the Cr2+ -X(0.839 eV lines) system in GaAs. These calculations show that it is necessary, in order to explain the zero field splitting, to introduce a strong trigonal field. The main points that are explained by the presence of a strong trigonal field are the reduction of the Jahn-Teller energy and the occurrence of vibronic lines labelled I and J. A spin Hamiltonian is also presented that explains the zero field fine structure and the line intensities.
10 citations
TL;DR: In this article, a model for the 0.839 eV luminescence line of GaAs/Cr was presented, where the ground state is a 5E orbital doublet split by the trigonal field from a 5T2 state.
Abstract: We give a model for the 0.839 eV luminescence line of GaAs/Cr. This model refines the first model that we presented. The ground state is a 5E orbital doublet split by the trigonal field from a 5T2 state. This doublet is coupled to a ξ(C3V) vibration mode which is built both from ξ and τ2 cubic vibrations modes ((E + A1) ⊗ (ξ + τ2) scheme). We recall how the zero field splitting and the Zeeman experiments can be interpreted and present the fit of the uniaxial stress experiments, which all agree with the present model.
5 citations
TL;DR: In this paper, the internal luminescence of Cr2+(3d4) in GaAs under hydrostatic pressure was observed and correlated with the lifting of the degeneracy between the excited level of Cr 2+ and the conduction band of the host material.
5 citations
TL;DR: In this paper, an isotropic E.P. spectrum characterized by g = 2.192± 0.001 and a line width of 150 Gauss is observed, attributed to Co2+ (3d7) substitutional to indium.
Abstract: Electron paramagnetic resonance (E.P.R.) experiments on n type and semi-insulating cobalt doped InP are reported. In all samples, an isotropic E.P.R. spectrum characterized by g = 2.192± 0.001 and a line width of 150 Gauss is observed. This signal is attributed to Co2+ (3d7) substitutional to indium.
5 citations
TL;DR: In this article, the position of these bands were compared to the results of theoretical calculations on the binding energy of the impurity and on subband position, and the results were consistent with the calculations.
Abstract: Luminescence experiments have been performed on Multiple Quantum Wells structures with well thicknesses varying between 100 A and 1000 A. Varying the laser excitation density between 10 mW cm −2 and 5 kW cm −2 allows to separate different bands related to hydrogenic impurities. The position of these bands are compared to the results of theoretical calculations on the binding energy of the impurity and on subband position. All our results are consistent with the calculations.