An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Hydrogen sensors are of increasing importance in connection with the development and expanded use of hydrogen gas as an energy carrier and as a chemical reactant. There are an immense number of sensors reported in the literature for hydrogen detection and in this work these sensors are classified into eight different operating principles. Characteristic performance parameters of these sensor types, such as measuring range, sensitivity, selectivity and response time are reviewed and the latest technology developments are reported. Testing and validation of sensor performance are described in relation to standardisation and use in potentially explosive atmospheres so as to identify the requirements on hydrogen sensors for practical applications.

Hydrogen Sensors - A review

In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface Hydrogen is introduced into The active layer A thin film comprising SiO x N y is formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiO x N y  Also, a thin film comprising SiO x N y is formed under the active layer The active layer includes a metal element at a concentration of 1×10 15 to 1×10 19 cm −3 and hydrogen at a concentration of 2×10 19 to 5×10 21 cm −3 

Semiconductor device and method for forming the same

Semiconductor gas sensors

Multichip and single chip modules are presented as well as a chips first fabrication of such modules. The multichip module comprises a plurality of chips affixed in a planar array by a structural material which surrounds the sides of the chips such that the upper surfaces of the chips and an upper surface of the structural material are co-planar and the lower surface of at least one chip and a lower surface of the structural material are co-planar. A photo-patternable dielectric is disposed directly on the upper surfaces of the chips. The photo-patternable dielectric includes vias to at least some contact pads at the upper surfaces of the chips and the module further comprises an intrachip metallization layer on the photo-patternable dielectric layer. Subsequent processing provides a multi-layer chip interconnect structure over the intrachip metallization layer and photo-patternable dielectric. Testing and repair of the module can be accomplished prior to or subsequent to fabrication of the multi-layer chip interconnect. Formation of multiple single chip modules is accomplished by singulating the multichip module into individual packages.

Single chip modules, repairable multichip modules, and methods of fabrication thereof

A resonant bridge microaccelerometer is formed using patterned Silicon-on-Insulator (SOI) material. A buried layer is formed in the silicon substrate using preferably oxygen ion implanting techniques. A predetermined proof mass is subsequently formed by selective deposition of an appropriate material on an epitaxially grown layer of silicon generally over the buried layer. The buried layer is subsequently removed by a hydrofluoric acid etch, thereby forming a gap generally everywhere therebetween the proof mass and the supporting silicon substrate, and delineating the resonant microbridges within the microaccelerometer.

Method and product for fabricating a resonant-bridge microaccelerometer

The barrier height of a Pd‐CdS Schottky diode is reported to decrease markedly when exposed to hydrogen. This effect is believed to be due to the decrease in Pd work function. It makes a good simple hydrogen detector (even at 298 °K) over the range 500–5000 ppm H2.

Palladium/cadmium‐sulfide Schottky diodes for hydrogen detection

The C‐V characteristics of palladium gate MOS capacitors change significantly when exposed to an air ambient containing up to 4% hydrogen. From these experiments, it is concluded that these changes are due to the lowering of the palladium work function (by as much as 1 V) brought on by the formation of palladium hydride. Mobile charges in the oxide do not contribute to the observed C‐V shifts brought about by exposure to hydrogen.

Hydrogen‐sensitive palladium gate MOS capacitors

A bearing element having an adherent score-resistant coating on its surface comprising a carbonized layer of an organic resin in which the layer is carbonized by ion implantation. The ion implantation is controlled to not only provide graphite-like and diamond-like structures in the carbonized coating but to also produce chemical bonding between carbon atoms of the resultant coating and atoms of the bearing surface.

Metal bearing surface having an adherent score-resistant coating

A vertical depletion mode power field effect transistor having a greatly increased drain-to-source breakdown voltage. The drain region is formed in the substrate and separated from the channel by a first insulative layer having apertures which allow the passage of electrical currents. The channel, which is formed between the first insulative layer and a second insulative layer parallel to the substrate surface, contains both a source region, formed by implantation of impurities of the same type as are used to form the drain region, and a gate region. In this configuration, the normally high voltage which exists between the gate and drain is imposed over a greater distance than in conventional depletion mode vertical FETs, so that this new configuration produces vertical power FETs having much higher breakdown voltages than do conventional depletion mode vertical FETs. Islands having a conductivity type opposite to that used to form the source region are formed immediately below the second insulative layer and serve to prevent the creation of a charge inversion layer in the channel, where the inversion layer adversely affects the turn off characteristic of the j-MOS power transistor.

Bernard A. MacIver

Papers

Method and product for fabricating a resonant-bridge microaccelerometer

Palladium/cadmium‐sulfide Schottky diodes for hydrogen detection

Hydrogen‐sensitive palladium gate MOS capacitors

Metal bearing surface having an adherent score-resistant coating

High voltage depletion mode MOS power field effect transistor