B
Bhaskaran Muralidharan
Researcher at Indian Institute of Technology Bombay
Publications - 140
Citations - 1314
Bhaskaran Muralidharan is an academic researcher from Indian Institute of Technology Bombay. The author has contributed to research in topics: Thermoelectric effect & Tunnel magnetoresistance. The author has an hindex of 18, co-authored 108 publications receiving 1062 citations. Previous affiliations of Bhaskaran Muralidharan include Purdue University & University of Regensburg.
Papers
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Probing electronic excitations in molecular conduction
TL;DR: In this article, the authors identify experimental signatures in the currentvoltage (I-V) characteristics of weakly contacted molecules directly arising from excitations in their many electron spectrum using a multielectron master equation in the Fock space of an exact diagonalized model manybody Hamiltonian for a prototypical molecule.
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Performance analysis of an interacting quantum dot thermoelectric setup
TL;DR: In this paper, the power output and efficiency of a single orbital noninteracting quantum dot thermoelectric setup was evaluated using the Pauli master equation approach. But the authors only considered the case of vanishing coupling to the contacts, where no electrical power is extracted.
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Generic model for current collapse in spin-blockaded transport
TL;DR: In this paper, a generic model for the conditions required to observe negative differential resistance (NDR) in spin-blockaded transport through weakly coupled-double quantum dots is presented.
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Thermoelectric study of dissipative quantum-dot heat engines
Bitan De,Bhaskaran Muralidharan +1 more
TL;DR: In this article, the thermoelectric response of a dissipative quantum-dot heat engine based on the Anderson-Holstein model was examined in two relevant operating limits, (i) when the dot phonon modes are out of equilibrium, and (ii) when a heat bath is strongly coupled to the dot.
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Power and efficiency analysis of a realistic resonant tunneling diode thermoelectric
TL;DR: In this paper, a resonant tunneling diode structure was proposed to combine the best of both aspects, that is, density of states distortion with a finite bandwidth due to confinement that aids the efficiency and a large number of current carrying transverse modes that enhances the total power output.