Showing papers by "Biswajit Ghosh published in 2016"
TL;DR: In this article, a long term field study was conducted in a couple of rural areas of different geographical locations to quantify the impact of the energy quality on the human development index (HDI) value.
36 citations
TL;DR: This first investigation into the potential of electroless nickel deposition to form ohmic contacts on single layer graphene shows promise toward low-cost and large-scale graphene integration into functional devices such as flexible sensors and printed electronics.
Abstract: We report the first investigation into the potential of electroless nickel deposition to form ohmic contacts on single layer graphene. To minimize the contact resistance on graphene, a statistical model was used to improve metal purity, surface roughness, and coverage of the deposited film by controlling the nickel bath parameters (pH and temperature). The metalized graphene layers were patterned using photolithography and contacts deposited at temperatures as low as 60 °C. The contact resistance was 215 ± 23 Ω over a contact area of 200 μm × 200 μm, which improved upon rapid annealing to 107 ± 9 Ω. This method shows promise toward low-cost and large-scale graphene integration into functional devices such as flexible sensors and printed electronics.
28 citations
TL;DR: In this paper, chemical bath deposition CdS films were grown onto vacuum evaporated ultrathin aluminium films (25nm) and the bilayers thus formed were subjected to heat treatment at the temperatures 300°C, 400°C and 500°C for 90 seconds in a muffle furnace.
4 citations
TL;DR: In this article, a mathematical model has been developed to evaluate the electrical contact of metal-semiconductor (M-S) interface, which is normally evaluated using dc measurements like transfer of length model and volume transfer mode model, but in thin and nano-structure presences of surface states at the M-S interface perturb the dc results and led to the apparent conclusion.
Abstract: The electrical contact of metal–semiconductor (M–S) interface is normally evaluated using dc measurements like transfer of length model and volume transfer mode model. Preparation of these measurements needs high grade infrastructural facilities. Moreover, in the thin and nano-structure presences of surface states at the M–S interface perturb the dc results and led to the apparent conclusion. Influence of the surface states can be eliminated using the ac measurements. Considering M–S interface as a leaky capacitance a mathematical model has been developed in the present paper. Measuring M–S capacitance in three semiconducting films, e.g., n-Si, p-CdTe, and p-Cu2O and substituting these values in the developed model various parameters of the interface were evaluated. Results obtained by this method were compared with the results from dc measurements and these were comparable with each other. The scope of this paper is the application of this method to the laboratories lacking in high grade infrastructure.
1 citations
TL;DR: In this article, the formation of ZnO:Al nanowires by oxidizing bi-layered Zn/Al film and subsequent investigation of photoresponse phenomenon of as grown and argon annealed samples in comparison to pristine znO nanowire.