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Brent A. Wacaser
Researcher at IBM
Publications - 74
Citations - 2176
Brent A. Wacaser is an academic researcher from IBM. The author has contributed to research in topics: Nanowire & Layer (electronics). The author has an hindex of 16, co-authored 73 publications receiving 2040 citations. Previous affiliations of Brent A. Wacaser include Purdue University & Brigham Young University.
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Journal ArticleDOI
Structural properties of 〈111〉B -oriented III–V nanowires
Jonas Johansson,Lisa Karlsson,C. Patrik T. Svensson,Thomas Mårtensson,Brent A. Wacaser,Knut Deppert,Lars Samuelson,Werner Seifert +7 more
TL;DR: GaP nanowires grown by metal-organic vapour-phase epitaxy are examined and it is shown that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets, resulting in a microfaceting of thenanowires.
Journal ArticleDOI
Preferential Interface Nucleation: An Expansion of the VLS Growth Mechanism for Nanowires
Brent A. Wacaser,Kimberly A. Dick,Jonas Johansson,Magnus T. Borgström,Knut Deppert,Lars Samuelson +5 more
TL;DR: A review and expansion of the fundamental processes of the vapor-liquid-solid (VLS) growth mechanism for nanowires is presented in this paper, where most of the concepts may be applicable to whiskers, nanotubes, and other unidirectional growth.
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Growth of one-dimensional nanostructures in MOVPE
Werner Seifert,Magnus T. Borgström,Knut Deppert,Kimberly A. Dick,Jonas Johansson,Magnus Larsson,Thomas Mårtensson,Niklas Sköld,C. Patrik T. Svensson,Brent A. Wacaser,L. Reine Wallenberg,Lars Samuelson +11 more
TL;DR: In this paper, the use of metal organic vapor-phase epitaxy (MOVPE) for growth of one-dimensional nanostructures in the material systems GaAs, GaP, InAs and InP is investigated.
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Effects of Supersaturation on the Crystal Structure of Gold Seeded III−V Nanowires
Jonas Johansson,Lisa Karlsson,Kimberly A. Dick,Jessica Bolinsson,Brent A. Wacaser,Knut Deppert,Lars Samuelson +6 more
TL;DR: In this paper, the planar defect density and the crystal structure of III-V metal-particle seeded nanowires were compared under different growth conditions: pulsing of the Ga source, and continuous growth with and without In background.
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Growth related aspects of epitaxial nanowires
TL;DR: In this paper, the authors used metal-organic vapour phase epitaxy for growth investigations of epitaxial nanowires in III-V materials, such as GaAs, GaP, InAs, and InP.