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Werner Seifert
Researcher at Lund University
Publications - 120
Citations - 4716
Werner Seifert is an academic researcher from Lund University. The author has contributed to research in topics: Quantum dot & Metalorganic vapour phase epitaxy. The author has an hindex of 32, co-authored 120 publications receiving 4605 citations.
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Journal ArticleDOI
Epitaxial III-V nanowires on silicon
Thomas Mårtensson,C. Patrik T. Svensson,T. Brent A. Wacaser,Magnus Larsson,Werner Seifert,Knut Deppert,Anders Gustafsson,L. Reine Wallenberg,Lars Samuelson +8 more
TL;DR: In this paper, the authors present results of ideal epitaxial nucleation and growth of III−V semiconductor nanowires on silicon substrates, and demonstrate the efficient room-temperature generation of light on silicon is demonstrated by the incorporation of double heterostructure segments in such nano-structures.
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Nanowire Arrays Defined by Nanoimprint Lithography
Thomas Mårtensson,Patrick Carlberg,Magnus T. Borgström,Lars Montelius,Werner Seifert,Lars Samuelson +5 more
TL;DR: In this paper, the use of nanoimprint lithography to define arrays of vertical InP nanowires is demonstrated, where each nanowire is individually seeded from a catalyzing gold particle and then grown via vapor-liquid-solid growth in a metalorganic vapor phase epitaxy system.
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Structural properties of 〈111〉B -oriented III–V nanowires
Jonas Johansson,Lisa Karlsson,C. Patrik T. Svensson,Thomas Mårtensson,Brent A. Wacaser,Knut Deppert,Lars Samuelson,Werner Seifert +7 more
TL;DR: GaP nanowires grown by metal-organic vapour-phase epitaxy are examined and it is shown that the nanowire segments between the twin planes are of octahedral shape and are terminated by {111} facets, resulting in a microfaceting of thenanowires.
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Growth and Optical Properties of Strained GaAs−GaxIn1-xP Core−Shell Nanowires
Niklas Sköld,Lisa Karlsson,Magnus Larsson,Mats-Erik Pistol,Werner Seifert,Johanna Trägårdh,Lars Samuelson +6 more
TL;DR: In this paper, the authors synthesized GaAs−GaxIn1-xP (0.34 < x < 0.69) core−shell nanowires by metal−organic vapor phase epitaxy.
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Mass transport model for semiconductor nanowire growth.
TL;DR: A mass transport model based on surface diffusion for metal-particle-assisted nanowire growth is presented and it is demonstrated that the Gibbs-Thomson effect can be neglected for III/V nanowires grown at conventional temperatures and pressures.