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Brian C. O’Regan

Researcher at Imperial College London

Publications -  73
Citations -  13754

Brian C. O’Regan is an academic researcher from Imperial College London. The author has contributed to research in topics: Dye-sensitized solar cell & Photocurrent. The author has an hindex of 53, co-authored 73 publications receiving 12410 citations. Previous affiliations of Brian C. O’Regan include École Polytechnique & Catalan Institution for Research and Advanced Studies.

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Quantifying Regeneration in Dye-Sensitized Solar Cells

TL;DR: In this paper, the authors applied a new experimental pro-tocol for determining the kinetics of the oxidation of iodide (aka dye regeneration) in dye sensitized solar cells (DSSCs) using measurements on full cells under operating conditions.
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Hole‐Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature

TL;DR: The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature to demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm(2) V(-1) s(-1).
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Kinetic competition in liquid electrolyte and solid-state cyanine dye sensitized solar cells

TL;DR: In this article, the photovoltaic performance of liquid electrolyte and solid-state dye sensitized solar cells, employing a squarilium methoxy cyanide dye, is evaluated in terms of interfacial electron transfer kinetics.
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Electric field-induced hole transport in copper(I) thiocyanate (CuSCN) thin-films processed from solution at room temperature

TL;DR: The optical, structural and charge transport properties of solution-processed films of copper(I) thiocyanate (CuSCN) are investigated and found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility.
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Measurement of Charge-Density Dependence of Carrier Mobility in an Organic Semiconductor Blend

TL;DR: In this article, a new methodology for analyzing the charge-density dependence of carrier mobility in organic semiconductors, applicable to the low-charge-density regime (10 14 -10 17 cm -3 ) corresponding to the operation conditions of many organic optoelectronic devices, is reported.