Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

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The 2018 GaN power electronics roadmap

본 연구는 현존하는 여덟 개의 〈뿔피리를 부는 제빵사〉 작품이 산발적으로 우연히 등장한 것이 아닌 서로 유기적인 영향관계를 주고 받으며 생산된 하나의 도상으로 살펴보았다. “뿔피리를 부는 제빵사” 그림에 대한 현재까지의 연구는 대부분 그림에 나타나 있는 다양한 빵들을 성만찬을 의미하는 종교적 상징으로 해석하고 있다. 이에 반해 본 연구는 “뿔피리를 부는 제빵사” 도상이 유독 17세기 중후반 네덜란드에서 생산된 사실에 주목하고, 그 이유를 동시대 네덜란드인들의 일상에 직접적인 영향을 주었던 빵의 생산 및 공급 그리고 유통과정에서 찾고자 한다. 여기에는 빵이 당대 네덜란드인들의 식생활 뿐 아니라 그들의 경제생활 더나아가 국가경제 전체에 어떤 중요한 역할을 했는지에 대한 연구가 선행되어야 한다. 주로 풍속화의 전통으로 해석되었던 “뿔피리를 부는 제빵사” 그림은 본 연구에서 풍속화와 초상화 두 장르가 혼합한 도상으로 다루어졌으며, 이제까지의 연구에서 미흡했던 초상화로서의 가능성이 적극적으로 제기되었다. 제빵사의 초상화 또는 화가의 자화상으로 생산된 〈뿔피리를 부는 제빵사〉의 시대적 배경에는 제빵사의 경제적 여유와 사회적 지위상승 그리고 제빵사를 영혼의 양식을 공급하는 고귀한 직업으로 승화시킨 칼비니즘의 영향이 있다. 제빵사들이 부를 축적할 수 있었던 배경에는 국가가 나서서 빵의 생산과 공급을 철저하게 관리해준 덕분이었다. 17세기 네덜란드의 제빵사들은 길드에 속해야만 빵을 팔 수 있었고 각 제빵사들의 빵 만드는 법은 외부인들에게 절대로 공개되지 않았다. 동시에 당시 네덜란드인들은 세금을 내지 않고는 빵을 먹기가 힘들었다. 이런 이유로 개인의 집에 오븐을 설치하는 것은 금지되었고, 빵은 꼭 관헌들에게 세금을 내는 합법적인 제빵사에게서만 살 수 있었다. 이렇게 17세기 네덜란드는 직업으로서 빵 굽는 사람을 보호하는 동시에 단속하기 위해 매우 엄격한 규정을 제정하였다. 17세기 네덜란드인들에게 빵은 그들의 식생활 뿐 아니라 그들의 다양한 직업과도 관련이 있었으며 빵의 생산과 유통과정에 개입한 국가의 권위와 통제를 상징하기도 한다. 빵의 생산과 유통에 붙는 세금은 국가의 경제를 지탱하고 발전시키는데 중요한 재원이었으며, 동시에 국민들을 엄격하게 관리함으로써 국가의 질서를 세우기 위한 효과적인 방편이었다. 빵가격은 변동이 심한 곡물가격과 빵의 크기에 따라서 엄격하게 결정되었다. 네덜란드정부는 평상시에 빵의 공식적인 무게와 가격을 고정시켰는데, 이는 다른 음식에서는 찾아볼 수 없는 유일한 관리방식이었다. 따라서 동시대 네덜란드인들에게 빵은 국가의 적극적인 개입과 관리체계를 통해서만 그들의 입에 넣을 수 있는 음식이었다. 이러한 맥락에서 볼 때, 본 연구에서 다룬 〈뿔피리를 부는 제빵사〉 그림에서 풍성하게 차려진 다양한 빵은 경제적인 풍요와 정치적인 안정을 의미한다. 여러 가지 다양한 음식 중에서도 빵이 이러한 의미를 가장 효과적으로 전달한다는 점에서 〈뿔피리를 부는 제빵사〉 그림에서 빵은 당시 네덜란드의 물질적 풍요뿐만 아니라 국가의 번영과 안녕을 의미한다고 볼 수 있다.

17세기 네덜란드 미술에 나타난 빵의 사회사

Interface engineering and chemistry of Hf-based high-k dielectrics on III–V substrates

GaN and AlGaN have shown great potential in next-generation high-power electronic devices; however, they are plagued by a high density of interface states that affect device reliability and performance, resulting in large leakage current and current collapse. In this review, the authors summarize the current understanding of the gate leakage current and current collapse mechanisms, where awareness of the surface defects is the key to controlling and improving device performance. With this in mind, they present the current research on surface states on GaN and AlGaN and interface states on GaN and AlGaN-based heterostructures. Since GaN and AlGaN are polar materials, both are characterized by a large bound polarization charge on the order of 1013 charges/cm2 that requires compensation. The key is therefore to control the compensation charge such that the electronic states do not serve as electron traps or affect device performance and reliability. Band alignment modeling and measurement can help to determi...

Electronic surface and dielectric interface states on GaN and AlGaN

Recent years have witnessed GaN-based devices delivering their promise of unprecedented power and frequency levels and demonstrating their capability as an able replacement for Si-based devices. High-electron-mobility transistors (HEMTs), a key representative architecture of GaN-based devices, are well-suited for high-power and high frequency device applications, owing to highly desirable III-nitride physical properties. However, these devices are still hounded by issues not previously encountered in their more established Siand GaAs-based devices counterparts. Metal–insulator–semiconductor (MIS) structures are usually employed with varying degrees of success in sidestepping the major problematic issues such as excessive leakage current and current instability. While different insulator materials have been applied to GaN-based transistors, the properties of insulator/III-N interfaces are still not fully understood. This is mainly due to the difficulty of characterizing insulator/AlGaN interfaces in a MIS HEMT because of the two resulting interfaces: insulator/AlGaN and AlGaN/GaN, making the potential modulation rather complicated. Although there have been many reports of low interface-trap densities in HEMT MIS capacitors, several papers have incorrectly evaluated their capacitance–voltage (C–V) characteristics. A HEMT MIS structure typically shows a 2-step C–V behavior. However, several groups reported C–V curves without the characteristic step at the forward bias regime, which is likely to the high-density states at the insulator/ AlGaN interface impeding the potential control of the AlGaN surface by the gate bias. In this review paper, first we describe critical issues and problems including leakage current, current collapse and threshold voltage instability in AlGaN/GaN HEMTs. Then we present interface properties, focusing on interface states, of GaN MIS systems using oxides, nitrides and high-κ dielectrics. Next, the properties of a variety of AlGaN/GaN MIS structures as well as different characterization methods, including our own photo-assisted C–V technique, essential for understanding and developing successful surface passivation and interface control schemes, are given in the subsequent section. Finally we highlight the important progress in GaN MIS interfaces that have recently pushed the frontier of nitride-based device technology.

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Insulated gate and surface passivation structures for GaN-based power transistors

Al2O3 films, HfO2 films, and HfO2/Al2O3 stacked structures were deposited on n-type, Ga-face, GaN wafers using plasma-enhanced atomic layer deposition (PEALD). The wafers were first treated with a wet-chemical clean to remove organics and an in-situ combined H2/N2 plasma at 650 °C to remove residual carbon contamination, resulting in a clean, oxygen-terminated surface. This cleaning process produced slightly upward band bending of 0.1 eV. Additional 650 °C annealing after plasma cleaning increased the upward band bending by 0.2 eV. After the initial clean, high-k oxide films were deposited using oxygen PEALD at 140 °C. The valence band and conduction band offsets (VBOs and CBOs) of the Al2O3/GaN and HfO2/GaN structures were deduced from in-situ x-ray and ultraviolet photoemission spectroscopy (XPS and UPS). The valence band offsets were determined to be 1.8 and 1.4 eV, while the deduced conduction band offsets were 1.3 and 1.0 eV, respectively. These values are compared with the theoretical calculations b...

Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride

The effects of surface pretreatment, dielectric growth, and post deposition annealing on interface electronic structure and polarization charge compensation of Ga- and N-face bulk GaN were investigated. The cleaning process consisted of an ex-situ wet chemical NH4OH treatment and an in-situ elevated temperature NH3 plasma process to remove carbon contamination, reduce oxygen coverage, and potentially passivate N-vacancy related defects. After the cleaning process, carbon contamination decreased below the x-ray photoemission spectroscopy detection limit, and the oxygen coverage stabilized at ∼1 monolayer on both Ga- and N-face GaN. In addition, Ga- and N-face GaN had an upward band bending of 0.8 ± 0.1 eV and 0.6 ± 0.1 eV, respectively, which suggested the net charge of the surface states and polarization bound charge was similar on Ga- and N-face GaN. Furthermore, three dielectrics (HfO2, Al2O3, and SiO2) were prepared by plasma-enhanced atomic layer deposition on Ga- or N-face GaN and annealed in N2 ambient to investigate the effect of the polarization charge on the interface electronic structure and band offsets. The respective valence band offsets of HfO2, Al2O3, and SiO2 with respect to Ga- and N-face GaN were 1.4 ± 0.1, 2.0 ± 0.1, and 3.2 ± 0.1 eV, regardless of dielectric thickness. The corresponding conduction band offsets were 1.0 ± 0.1, 1.3 ± 0.1, and 2.3 ± 0.1 eV, respectively. Experimental band offset results were consistent with theoretical calculations based on the charge neutrality level model. The trend of band offsets for dielectric/GaN interfaces was related to the band gap and/or the electronic part of the dielectric constant. The effect of polarization charge on band offset was apparently screened by the dielectric-GaN interface states.

Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

This research focuses on the formation of Ag nanopatterns on periodically poled lithium niobate (PPLN). The photo-induced process employs UV-light exposure while the PPLN is immersed in a AgNO3 solution. The Ag deposition was consistent with previous results, showing preferential deposition along the domain boundary as well as an increased density of particles on the positive domain surface in comparison to the negative domain. By tuning the chemical solution concentration and the UV-light intensity, the Ag+ ion flux and the electron flux are varied and the deposition pattern could be controlled to either enhance the nanowire-like structures along the domain boundary or create a more uniform deposition pattern over the positive and negative domains. To understand the deposition process, we investigated the relationship between the Ag+ ion flux because of diffusion and the electron flux initiated by the UV exposure of the ferroelectric surface. The subsequent results suggest that this relationship is respo...

Photo-induced Ag deposition on periodically poled lithium niobate: Concentration and intensity dependence

GaN-based devices are currently limited by reliability issues such as gate leakage and current collapse, where the mechanisms responsible for degradation are closely related to the electronic surface state configuration. Therefore, understanding the electronic surface state configuration of GaN-based materials will help improve device performance. Since GaN has an inherent polarization, these materials are also subject to a bound polarization charge, which influences the electronic state configuration. In this study, the surface band bending of N-face GaN, Ga-face GaN, and Ga-face AlGaN was measured with x-ray photoemission spectroscopy after various cleaning steps to investigate the effects of the polarization. Despite the different surface bound charge on these materials, similar band bending was observed regardless of the magnitude or direction of the charge. Specifically, the band bending varied from −0.1 eV to 0.9 eV on these samples, which supported the models of a Fermi level pinning state at ∼0.4 eV to 0.8 eV below the conduction band. Based on available literature, we suggest this pinning state is indirectly evident of a nitrogen vacancy or gallium-dangling bond.

Brianna S. Eller

Papers

Electronic surface and dielectric interface states on GaN and AlGaN

Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride

Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

Photo-induced Ag deposition on periodically poled lithium niobate: Concentration and intensity dependence

Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States