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Byoung Hee Moon
Researcher at Sungkyunkwan University
Publications - 29
Citations - 1024
Byoung Hee Moon is an academic researcher from Sungkyunkwan University. The author has contributed to research in topics: Electron mobility & Schottky barrier. The author has an hindex of 14, co-authored 26 publications receiving 801 citations. Previous affiliations of Byoung Hee Moon include Florida State University & Incheon National University.
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Journal ArticleDOI
Field-effect transistors based on few-layered α-MoTe2
Nihar R. Pradhan,Daniel Rhodes,Simin Feng,Yan Xin,Shahriar Memaran,Byoung Hee Moon,Humberto Terrones,Mauricio Terrones,Luis Balicas +8 more
TL;DR: The overall electronic performance of MoTe2 is comparable to those of MoS2 and MoSe2, but the heavier element Te leads to a stronger spin-orbit coupling and possibly to concomitantly longer decoherence times for exciton valley and spin indexes.
Journal ArticleDOI
Thickness-dependent in-plane thermal conductivity of suspended MoS2 grown by chemical vapor deposition
Jung Jun Bae,Hye Yun Jeong,Gang Hee Han,Jaesu Kim,Hyun Kim,Min Su Kim,Byoung Hee Moon,Seong Chu Lim,Young Hee Lee +8 more
TL;DR: The in-plane thermal conductivities of suspended monolayer, bilayer, and multilayer MoS2 films were measured in vacuum by using non-invasive Raman spectroscopy and it is observed that the Fuchs-Sondheimer model works for the thickness-dependent thermal conductivity ofMoS2 down to 10 nm in thickness at room temperature.
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Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure
Min-Kyu Joo,Byoung Hee Moon,Hyunjin Ji,Gang Hee Han,Hyun Kim,Gwanmu Lee,Seong Chu Lim,Dongseok Suh,Young Hee Lee +8 more
TL;DR: It is reported that use of h-BN thin film as a substrate for monolayer MoS2 can induce ∼6.5 × 1011 cm-2 electron doping at room temperature which was determined using theoretical flat band model and interface trap density.
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Electrical Transport Properties of Polymorphic MoS2
Jun Suk Kim,Jaesu Kim,Jiong Zhao,Sungho Kim,Jin Hee Lee,Youngjo Jin,Homin Choi,Byoung Hee Moon,Jung Jun Bae,Young Hee Lee,Seong Chu Lim +10 more
TL;DR: The observation of the 2H, 1T, and 1T' phases coexisting in Li-treated MoS2, which result in unusual transport phenomena, and the resistance curve fits well with 2D-variable range-hopping transport behavior, where electrons hop over 1T domains that are bounded by semiconducting 2H phases.
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Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors
Byoung Hee Moon,Gang Hee Han,Hyun Kim,Homin Choi,Jung Jun Bae,Jaesu Kim,Youngjo Jin,Hye Yun Jeong,Min-Kyu Joo,Young Hee Lee,Seong Chu Lim +10 more
TL;DR: Comparative studies of Au top and edge contacts with monolayer MoS2 reveal a temperature-dependent ideality factor and Schottky barrier height (SBH), which clarify how the SBH and inhomogeneities can be controlled in devices containing TMD materials.