An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long diameter, the wiring in accordance with the shape of the contact hole is formed, and the wiring portion of the contact hole is likely to have a depression compared with other portions. A penetrating opening is formed by irradiating a light-transmitting insulating film with laser light having high intensity and a pulse high in repetition frequency. A plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to have an even thickness of a wiring by reducing a partial depression and also to ensure contact resistance.

Semiconductor device and method for manufacturing the same, and electric device

The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it.

Electronic device, semiconductor device and manufacturing method thereof

A method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on an insulating substrate; forming a gate insulating layer; forming a semiconductor layer; forming a data conductive layer including a data line and a drain electrode; depositing a passivation layer; forming a photoresist including a first portion located on an end portion of the gate line, a second portion thicker than the first portion and located on the drain electrode, and a third portion thicker than the second portion; exposing a portion of the passivation layer under the second portion of the photoresist and a portion of the gate insulating layer under the first portion of the photoresist by etching using the photoresist as an etch mask; forming first and second contact holes exposing the drain electrode and the end portions of the gate line, respectively; and forming a pixel electrode connected to the drain electrode through the first contact hole.

Thin film transistor array panel and manufacturing method thereof

In a method of manufacturing a photoelectric device, a transparent conductive layer is formed on a substrate, and the transparent conductive layer is partially etched using an etching solution including hydrofluoric acid Thus, a transparent electrode having a concavo-convex pattern on its surface is formed When the transparent conductive layer is partially etched, a haze of the transparent electrode may be controlled by adjusting an etching time of the transparent conductive layer Also, since the etching solution is sprayed to the transparent conductive layer to etch the transparent conductive layer, the concavo-convex pattern on the surface of the transparent electrode may be easily formed even though the size of the substrate increases

Method of manufacturing photoelectric device

Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.

Method of manufacturing photoelectric conversion device

PROBLEM TO BE SOLVED: To provide a thin-film transistor substrate with electric characteristics improved by preventing natural oxidation and its manufacturing method, and to provide a liquid crystal display panel and an electroluminescent display panel that have the substrate. SOLUTION: The thin-film transistor includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on a base substrate. The active layer is formed over the gate electrode to cover the gate electrode. The source electrode and the drain electrode are formed separately over the active layer with a predetermined interval. The buffer layer is formed between the active layer and the source and drain electrodes respectively, and comprises a plurality of materials having a continuously variable content ratio, depending on its thickness. The buffer layer is formed between the source and drain electrodes and the active layer, thereby preventing contact resistance due to oxidation from increasing, so that the electrical characteristics of the thin-film transistor can be improved. COPYRIGHT: (C)2007,JPO&INPIT

Thin-film transistor substrate and its manufacturing method, liquid display panel and electroluminescent display panel having the substrate

PROBLEM TO BE SOLVED: To provide a method of forming a silicon layer in a manner of improving a silicon crystal fraction, and to provide a method of manufacturing a display substrate using the same. SOLUTION: The method of forming a silicon layer includes: a step of plasma pretreatment of a surface of a silicon nitride layer formed through a plasma-enhanced chemical vapor deposition using a gas selected from SiF 4 , NH 3 , and SiF 4 -H 2 as a first reaction gas; and a step of forming a silicon layer on the pretreated silicon nitride layer through a plasma-enhanced chemical vapor deposition using a second reaction gas containing H 2 and Ar mixed to each other. Therefore, a crystal fraction of a silicon crystal is improved by the silicon layer, and consequently a silicon layer is manufactured, in which grain size of the silicon crystal and uniformity in distribution are improved. COPYRIGHT: (C)2007,JPO&INPIT

Method of forming silicon layer, and method of manufacturing display substrate using same

To increase slew rate of the source driver amplifier more bias current is needed in general. But this means shorter battery life. A new slew rate enhancement method that switches the compensation capacitor is proposed. By using it several times higher slew rate can be obtained without increasing bias current.

Byoung-June Kim

Papers

Method of manufacturing photoelectric device

Method of manufacturing photoelectric conversion device

Thin-film transistor substrate and its manufacturing method, liquid display panel and electroluminescent display panel having the substrate

Method of forming silicon layer, and method of manufacturing display substrate using same

P-46: A Low Power Slew Rate Enhancement Method For the Mobile TFT Source Driver Amplifier