C
C. Dachs
Researcher at University of Montpellier
Publications - 12
Citations - 374
C. Dachs is an academic researcher from University of Montpellier. The author has contributed to research in topics: Power semiconductor device & Power MOSFET. The author has an hindex of 7, co-authored 12 publications receiving 340 citations.
Papers
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Journal ArticleDOI
SEGR and SEB in n-channel power MOSFETs
M. Allenspach,C. Dachs,G.H. Johnson,Ronald D. Schrimpf,Eric Lorfevre,J.-M. Palau,J.R. Brews,Kenneth F. Galloway,Jeffrey L. Titus,C.F. Wheatley +9 more
TL;DR: For particular bias conditions, it is shown that a device can fail due to either single event gate rupture (SEGR) or to single event burnout (SEB) as mentioned in this paper.
Journal ArticleDOI
SEU critical charge and sensitive area in a submicron CMOS technology
C. Detcheverry,C. Dachs,Eric Lorfevre,C. Sudre,G. Bruguier,J.-M. Palau,J. Gasiot,Robert Ecoffet +7 more
TL;DR: In this article, the effects of scaling on the notions of sensitive area and critical charge in SRAM memory cells were quantified using mixed-mode simulation, and the influence of parasitic bipolar action in cells fabricated in a submicron technology was shown.
Journal ArticleDOI
Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs
TL;DR: In this article, the effect of the ion's impact position on single event burnout in metal-oxide-semiconductor field effect transistors (MOSFETs) is investigated.
Journal ArticleDOI
Experimental and 2D simulation study of the single-event burnout in N-channel power MOSFETs
TL;DR: The use of the 2D simulator MEDICI as a tool for single event burnout comprehension is investigated in this paper, where simulation results are compared to experimental currents induced in an N channel power MOSFET by the ions from a /sup 252/Cf source.
Journal ArticleDOI
Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout
TL;DR: In this paper, a 2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEE) in power MOSFETs, including carrier lifetime reduction, base enlargement, and emitter doping decrease.