C
C. Haupt
Researcher at Fraunhofer Society
Publications - 16
Citations - 261
C. Haupt is an academic researcher from Fraunhofer Society. The author has contributed to research in topics: Monolithic microwave integrated circuit & Amplifier. The author has an hindex of 9, co-authored 15 publications receiving 231 citations.
Papers
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Journal ArticleDOI
Gate-Recessed AlGaN/GaN Based Enhancement-Mode High Electron Mobility Transistors for High Frequency Operation
Stephan Maroldt,C. Haupt,Wilfried Pletschen,Stefan Müller,Rudiger Quay,Oliver Ambacher,Christian Schippel,Frank Schwierz +7 more
TL;DR: By combining a low damage chlorine based gate-recess etching and a sophisticated technology for AlGaN/GaN depletion-mode high electron mobility transistors (HEMTs), this article fabricated high performance recessed enhancement-mode HEMTs.
Proceedings ArticleDOI
High Efficiency Digital GaN MMIC Power Amplifiers for Future Switch-Mode Based Mobile Communication Systems
Stephan Maroldt,C. Haupt,Rudolf Kiefer,Wolfgang Bronner,Stefan Mueller,W. Benz,Rudiger Quay,Oliver Ambacher +7 more
TL;DR: In this article, a high efficiency digital MMIC amplifier for mobile communication switchmode concepts was designed by utilizing a 0.25 μm GaN HEMT technology with fT of 32 GHz.
Journal ArticleDOI
Dual-Gate GaN MMICs for MM-Wave Operation
Rudiger Quay,Axel Tessmann,Rudolf Kiefer,Stephan Maroldt,C. Haupt,U. Nowotny,Rainer Weber,Hermann Massler,Dirk Schwantuschke,Matthias Seelmann-Eggebert,Arnulf Leuther,Michael Mikulla,Oliver Ambacher +12 more
TL;DR: In this article, the authors describe the millimeter-wave operation of III-N dual-gate MMICs based on a complete mm-wave MMIC technology suitable for operation up to 110 GHz.
Journal ArticleDOI
GaN HEMTs and MMICs for space applications
Patrick Waltereit,Wolfgang Bronner,Rudiger Quay,Michael Dammann,M. Casar,Stefan Müller,Richard Reiner,Peter Brückner,Rudolf Kiefer,F. van Raay,Jutta Kuhn,M. Musser,C. Haupt,Michael Mikulla,Oliver Ambacher +14 more
TL;DR: In this article, the authors report on recent results from their GaN transistor and circuit technology, which is characterized by state-of-theart performance, good uniformity and high yield as well as excellent long-term stability.
Journal ArticleDOI
Development of a high transconductance GaN MMIC technology for millimeter wave applications
TL;DR: In this paper, the influence of barrier thickness on the maximum transconductance (gm,max) was investigated by using two different technologies: growth of thin barrier layers and deep gate recess.